has been cited by the following article(s):
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[1]
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Design & Analysis of 5 nm PDSOI and FDSOI n-MOSFETs for Ultra-Low Power Applications with High-k Dielectric Materials
Materials Sciences and Applications,
2026
DOI:10.4236/msa.2026.172003
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[2]
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Continuous Grain Growth of High Band Gap InGaO on Crystalline In0.7Ga0.3O for 0.3 µm Channel Length Thin Film Transistors
Advanced Materials Technologies,
2025
DOI:10.1002/admt.202500561
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[3]
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Co-optimized e-mode AlGaN/GaN HEMT with composite p-GaN recessed cap and etched doped buffer for simultaneous DC and RF performance enhancement
Serbian Journal of Electrical Engineering,
2025
DOI:10.2298/SJEE250428007A
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[4]
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Reduction of Subthreshold Leakage Using Metal Strip in SGO Double-Gate MOSFET
2023 9th International Conference on Signal Processing and Communication (ICSC),
2023
DOI:10.1109/ICSC60394.2023.10441253
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