Physical Parameter Variation Analysis on the Performance Characteristics of Nano DG-MOSFETs

Journals Menu

Follow SCIRP

ISSN Print: 2153-1285
ISSN Online: 2153-1293
www.scirp.org/journal/cs
E-mail: cs@scirp.org

Citations

"Physical Parameter Variation Analysis on the Performance Characteristics of Nano DG-MOSFETs"
written by Yashu Swami, Sanjeev Rai,
published by Circuits and Systems, Vol.12 No.4, 2021

has been cited by the following article(s):

[1]	PREDICTIVE ANALYTICS OF JUNCTIONLESS DOUBLE GATE STRAINED MOSFET USING GENETIC ALGORITHM WITH DOE-BASED GREY RELATIONAL …
	Journal of Engineering …, 2023

[2]	Design Guidelines for Low Power Embedded Systems using Low Power Electronics
	WSEAS Transactions on Electronics, 2023

[3]	Doped Graphene on Silicon Bottom Gated FET for High Drain Current and Applications in RF And Logic Circuits
	2022 13th International …, 2022

[1]	Gate engineering solutions to mitigate short channel effects in a 20 nm MOSFET e-Prime - Advances in Electrical Engineering, Electronics and Energy, 2025 DOI:10.1016/j.prime.2025.100934

[2]	Fin-FET Enabled High-Speed PLL Design for Low Power Applications IETE Journal of Research, 2025 DOI:10.1080/03772063.2025.2470364

[3]	Gate engineering solutions to mitigate short channel effects in a 20 nm MOSFET e-Prime - Advances in Electrical Engineering, Electronics and Energy, 2025 DOI:10.1016/j.prime.2025.100934

[4]	Design Guidelines for Low Power Embedded Systems using Low Power Electronics WSEAS TRANSACTIONS ON ELECTRONICS, 2023 DOI:10.37394/232017.2023.14.8

[5]	Doped Graphene on Silicon Bottom Gated FET for High Drain Current and Applications in RF And Logic Circuits 2022 13th International Conference on Information and Communication Technology Convergence (ICTC), 2022 DOI:10.1109/ICTC55196.2022.9952777

Follow SCIRP