AC Recombination Velocity in the Back Surface of a Lamella Silicon Solar Cell under Temperature

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Journal of Modern Physics

ISSN Print: 2153-1196
ISSN Online: 2153-120X
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"AC Recombination Velocity in the Back Surface of a Lamella Silicon Solar Cell under Temperature"
written by Youssou Traore, Ndeye Thiam, Moustapha Thiame, Amary Thiam, Mamadou Lamine Ba, Marcel Sitor Diouf, Ibrahima Diatta, Oulymata Mballo, El Hadji Sow, Mamadou Wade, Grégoire Sissoko,
published by Journal of Modern Physics, Vol.10 No.10, 2019

has been cited by the following article(s):

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[1]	Diffusion Coefficient at Double Resonances in Frequency and Temperature, Applied to (n+/p/p+) Silicon Solar Cell Base Thickness Optimization under Long …
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[2]	Influence of the Magnetic Field on the Transient Decay of the Density of Charge Carriers in a Silicon Photocell with Vertical Multijunctions Connected in Series …
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[3]	AC Back Surface Recombination Velocity in n+-p-p+ Silicon Solar Cell under Monochromatic Light and Temperature
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[4]	Influence du champ magnétique sur une photopile bifaciale au silicium sous éclairement monochromatique par la face arrière en régime statique: Détermination de l' …
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[5]	AC Recombination Velocity as Applied to Determine n+/p/p+ Silicon Solar Cell Base Optimum Thickness
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[6]	One-Dimensional Study of Thermal Behavior of Typha Panel: Spectroscopy Characterization of Heat Exchange Coefficient on Front Face
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[7]	Diffusion Coefficient at Resonance Frequency as Applied to n+/p/p+ Silicon Solar Cell Optimum Base Thickness Determination
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[8]	Back Surface Recombination Velocity Dependent of Absorption Coefficient as Applied to Determine Base Optimum Thickness of an n+/p/p+ Silicon Solar Cell
	2020

[9]	Influence of Both Magnetic Field and Temperature on Silicon Solar Cell Base Optimum Thickness Determination
	2019

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