Reduction of Dislocation Densities of Ge Layers Grown on Si Substrates by Using Microwave Plasma Heating and Fabrication of High Hole Mobility MOSFETs on Ge Layers

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ISSN Print: 2327-6045
ISSN Online: 2327-6053
www.scirp.org/journal/msce
E-mail: msce@scirp.org

"Reduction of Dislocation Densities of Ge Layers Grown on Si Substrates by Using Microwave Plasma Heating and Fabrication of High Hole Mobility MOSFETs on Ge Layers"
written by Hiroki Nakaie, Tetsuji Arai, Chiaya Yamamoto, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Toshiyuki Takamatsu,
published by Journal of Materials Science and Chemical Engineering, Vol.5 No.1, 2017

has been cited by the following article(s):

[1]	Navid Mohammadian
	2020

[2]	STEM Moiré Observation of Lattice-Relaxed Germanium Grown on Silicon
	2017

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