"
A Ge-Graded SiGe HBT with β > 100 and fT = 67 GHz"
written by Jing Zhang, Yonghui Yang, Guangbing Chen, Yuxin Wang, Dongbing Hu, Kaizhou Tan, Wei Cui, Zhaohuan Tang,
published by
World Journal of Engineering and Technology,
Vol.3 No.4B, 2015
has been cited by the following article(s):
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[1]
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Ge/GaAs Hetero-structured n-p-n Transistor
2022 IEEE 31st Microelectronics Design & Test Symposium (MDTS),
2022
DOI:10.1109/MDTS54894.2022.9826916
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