Comparison of High Field Electron Transport in GaAs, InAs and In<sub>0.3</sub>Ga<sub>0.7</sub>As

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ISSN Print: 2153-1196
ISSN Online: 2153-120X
www.scirp.org/journal/jmp
E-mail: jmp@scirp.org

"Comparison of High Field Electron Transport in GaAs, InAs and In_0.3Ga_0.7As"
written by B. Bouazza, A. Guen-Bouazza, C. Sayah, N. E. Chabane-Sari,
published by Journal of Modern Physics, Vol.4 No.4A, 2013

has been cited by the following article(s):

[1]	Study and simulation of electron transport in Ga0.5ln0.5Sb based on Monte Carlo method
	Semiconductors, 2017

[2]	Study and simulation of electron transport in Ga0.5In0.5Sb based on Monte Carlo method
	2017

[3]	Study and simulation of electron transport in Ga0. 5In0. 5Sb based on Monte Carlo method
	Физика и техника …, 2017

[4]	A comprehensive model of gain recovery due to unipolar electron transport after a short optical pulse in quantum cascade lasers
	AIP Conference Proceedings, 2016

[1]	Study and simulation of electron transport in Ga0.5ln0.5Sb based on Monte Carlo method Semiconductors, 2017 DOI:10.1134/S1063782617120053

[2]	A comprehensive model of gain recovery due to unipolar electron transport after a short optical pulse in quantum cascade lasers Journal of Applied Physics, 2016 DOI:10.1063/1.4964939

[3]	A comprehensive model of gain recovery due to unipolar electron transport after a short optical pulse in quantum cascade lasers Journal of Applied Physics, 2016 DOI:10.1063/1.4964939

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