Journal of Surface Engineered Materials and Advanced Technology

Journal of Surface Engineered Materials and Advanced Technology

ISSN Print: 2161-4881
ISSN Online: 2161-489X
www.scirp.org/journal/jsemat
E-mail: jsemat@scirp.org
"In-Situ Monitoring of Chemical Vapor Deposition from Trichlorosilane Gas and Monomethylsilane Gas Using Langasite Crystal Microbalance"
written by Hitoshi Habuka, Yurie Tanaka,
published by Journal of Surface Engineered Materials and Advanced Technology, Vol.3 No.1A, 2013
has been cited by the following article(s):
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[2] Метилсилан. Часть I. ПриМенение в Передовых технологиях
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[3] Quartz crystal microbalance for real-time monitoring chlorosilane gas transport in slim vertical cold wall chemical vapor deposition reactor
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[4] Quartz Crystal Microbalances for Evaluating Gas Motion Differences between Dichlorosilane and Trichlorosilane in Ambient Hydrogen in a Slim Vertical Cold …
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[5] Optimal Design of TSM Langasite Resonator for High-Temperature Applications: A Review
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[6] In Situ Measurement for Evaluating Temperature Change Related to Silicon Film Formation in a SiHCl3-H2 System
ECS Journal of Solid State Science and Technology, 2016
[7] In Situ Observation of Chemical Vapour Deposition Using Langasite Crystal Microbalance
Chemical Vapor Deposition Recent Advances And Applications In Optical Solar Cells And Solid State Devices, 2016
[8] Effects of aluminum substitution on the structure and electric properties of langasite family crystals
Crystal Research and Technology, 2015
[9] By-Product Formation in a Trichlorosilane-Hydrogen System for Silicon Film Deposition
ECS Journal of Solid State Science and Technology, 2015
[10] In‐situ observation of chemical vapor deposition using SiHCl3 and BCl3 gases
physica status solidi (c), 2015
[11] Langasite crystal microbalance frequency behavior over wide gas phase conditions for chemical vapor deposition
Surface and Coatings Technology, 2013
[12] Method for determining chemical vapor deposition occurrence using langasite crystal microbalance
H Habuka - science24.com, 2013
[13] Room temperature silicon carbide thin-film formation
Materials Science Research Journal, 2013
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