Influence of Extended Bias Stress on the Electrical Parameters of Mixed Oxide Thin Film Transistors

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ISSN Print: 2153-1285
ISSN Online: 2153-1293
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"Influence of Extended Bias Stress on the Electrical Parameters of Mixed Oxide Thin Film Transistors"
written by Winnie P. Mathews, Rajitha N. P. Vemuri, Terry L. Alford,
published by Circuits and Systems, Vol.3 No.4, 2012

has been cited by the following article(s):

[1]	A Compact Drain Current Model for Thin-Film Transistor Under Bias Stress Condition
	2018

[2]	Investigation of the Electrical Characteristics of Bilayer ZnO/In2O3 Thin-Film Transistors Fabricated by Solution Processing
	Materials, 2018

[3]	Numerical simulation of bias and photo stress on indium–gallium–zinc-oxide thin film transistors
	Vacuum, 2015

[4]	Numerical simulation of bias and photo stress on indium-gallium-zinc-oxide thin film transistors
	Vacuum, 2015

[5]	Stability improvement of amorphous InGaZnO TFTs by an asymmetric design
	Electronics Letters, 2015

[6]	Correlation between carrier concentration distribution, IV and CV characteristics of a-InGaZnO TFTs
	2015

[7]	Post processing Treatment of InGaZnO Thin Film Transistors for Improved Bias-Illumination Stress Reliability
	2013

[8]	Paper No P37: The Effect of Bias‐Temperature Stress on Threshold Voltage Instabilities in a‐IGZO Under Light Illumination and Their Modeling Equation
	SID Symposium Digest of Technical Papers, Wiley Online Library, 2013

[1]	Investigation of the Electrical Characteristics of Bilayer ZnO/In2O3 Thin-Film Transistors Fabricated by Solution Processing Materials, 2018 DOI:10.3390/ma11112103

[2]	A Compact Drain Current Model for Thin-Film Transistor Under Bias Stress Condition IEEE Transactions on Electron Devices, 2018 DOI:10.1109/TED.2018.2818694

[3]	Numerical simulation of bias and photo stress on indium–gallium–zinc-oxide thin film transistors Vacuum, 2015 DOI:10.1016/j.vacuum.2015.04.021

[4]	Stability improvement of amorphous InGaZnO TFTs by an asymmetric design Electronics Letters, 2015 DOI:10.1049/el.2015.2036

[5]	Stability study of solution-processed zinc tin oxide thin-film transistors Electronic Materials Letters, 2015 DOI:10.1007/s13391-015-5209-4

[6]	Correlation between carrier concentration distribution, I-V and C-V characteristics of a-InGaZnO TFTs Journal of Display Technology, 2015 DOI:10.1109/JDT.2015.2480871

[7]	Effects of negative gate-bias stress on the performance of solution-processed zinc-oxide transistors Journal of the Korean Physical Society, 2014 DOI:10.3938/jkps.65.330

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