Selective Heating of Transition Metal Usings Hydrogen Plasma and Its Application to Formation of Nickel Silicide Electrodes for Silicon Ultralarge-Scale Integration Devices

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ISSN Print: 2327-6045
ISSN Online: 2327-6053
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E-mail: msce@scirp.org

"Selective Heating of Transition Metal Usings Hydrogen Plasma and Its Application to Formation of Nickel Silicide Electrodes for Silicon Ultralarge-Scale Integration Devices"
written by Tetsuji Arai, Hiroki Nakaie, Kazuki Kamimura, Hiroyuki Nakamura, Satoshi Ariizumi, Satoki Ashizawa, Keisuke Arimoto, Junji Yamanaka, Tetsuya Sato, Kiyokazu Nakagawa, Toshiyuki Takamatsu,
published by Journal of Materials Science and Chemical Engineering, Vol.4 No.1, 2016

has been cited by the following article(s):

[1]	Control of Large‐Scale Single‐Phase Ni Silicide Formation from Reactive Multilayers
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[2]	Investigations on argon and hydrogen plasmas produced by compact ECR plasma source
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[3]	Dynamical Theory of X-Ray Diffraction in a Crystal with a Surface Grating of Another Material
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[4]	ДИНАМИЧЕСКАЯ ТЕОРИЯ ДИФРАКЦИИ РЕНТГЕНОВСКИХ ЛУЧЕЙ В КРИСТАЛЛЕ С ПОВЕРХНОСТНОЙ РЕШЕТКОЙ ДРУГОГО МАТЕРИАЛА
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[5]	Formation of Poly-Si Films on Glass Substrates by Using Microwave Plasma Heating and Fabrication of TFT's on the Films
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[6]	Transient evolution of electron energy distribution function during microwave plasma breakdown for material processing
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[7]	Reduction of dislocation Densities of Ge Layers Grown on Sisubstrates by Using Microwave Plasma Heating and Fabrication of High Hole Mobility MOSFETs on …
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[8]	STEM Moiré Observation of Lattice-Relaxed Germanium Grown on Silicon
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[9]	Reduction of Dislocation Densities of Ge Layers Grown on Si Substrates by Using Microwave Plasma Heating and Fabrication of High Hole Mobility MOSFETs …
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[10]	Ohmic Contact Formation for n+ 4H-SiC Substrate by Selective Heating Method Using Hydrogen Radical Irradiation
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[11]	Reduction of Dislocation Densities of Ge Layers Grown on Si Substrates by Using Microwave Plasma Heating and Fabrication of High Hole Mobility MOSFETs …
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[1]	Investigations on argon and hydrogen plasmas produced by compact ECR plasma source Plasma Research Express, 2019 DOI:10.1088/2516-1067/ab3f90

[2]	Formation of Poly-Si Films on Glass Substrates by Using Microwave Plasma Heating and Fabrication of TFT’s on the Films Journal of Materials Science and Chemical Engineering, 2018 DOI:10.4236/msce.2018.61003

[3]	STEM Moiré Observation of Lattice-Relaxed Germanium Grown on Silicon Journal of Materials Science and Chemical Engineering, 2017 DOI:10.4236/msce.2017.51014

[4]	Reduction of Dislocation Densities of Ge Layers Grown on Si Substrates by Using Microwave Plasma Heating and Fabrication of High Hole Mobility MOSFETs on Ge Layers Journal of Materials Science and Chemical Engineering, 2017 DOI:10.4236/msce.2017.51006

[5]	Ohmic Contact Formation for n+4H-SiC Substrate by Selective Heating Method Using Hydrogen Radical Irradiation Journal of Materials Science and Chemical Engineering, 2017 DOI:10.4236/msce.2017.51005

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