Journal of Sensor Technology

Journal of Sensor Technology

ISSN Print: 2161-122X
ISSN Online: 2161-1238
www.scirp.org/journal/jst
E-mail: jst@scirp.org
"The Effect of Temperature and Doping Level on the Characteristics of Piezoresistive Pressure Sensor"
written by Beddiaf Abdelaziz, Kerrour Fouad, Salah Kemouche,
published by Journal of Sensor Technology, Vol.4 No.2, 2014
has been cited by the following article(s):
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[1] Performance Analysis of Resonant-Fin Transistors and Their Application in RF-Circuit Design
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[2] Performance Investigation of Carbon Nanotube Based Temperature Compensated Piezoresistive Pressure Sensor
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[3] Design and development of PZT based micropump for microfluidic applications
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[4] Simulation and Parametrical Analysis of Highly Sensitive MEMS Based Piezoresistive Pressure Sensor
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[5] Use of self-calibration data for multifunctional MEMS sensor prognostics
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[6] Optimization of the thermal drift caused by Joule heating in piezoresistive pressure sensor
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[7] Analysis of the possibility of a PGA309 integrated circuit application in pressure sensors
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[8] The pressure sensitivity of wrinkled B-doped nanocrystalline diamond membranes
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[9] A Numerical Model of Joule Heating in Piezoresistive Pressure Sensors
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[10] Biyolojik Tespit Uygulamaları İçin Pıezoresıstıve Mikrokantilever Tasarım, Simülasyon Ve Analizi
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[11] Thermal drift characteristics of capacitive pressure sensors
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[12] ISTANBUL TECHNICAL UNIVERSITY★ GRADUATE SCHOOL OF SCIENCE ENGINEERING AND TECHNOLOGY
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[13] Performance Optimization of a Capacitive Pressure Sensor.
Key Engineering Materials, 2015
[14] Performance optimization of a capacitive pressure sensor
Key Engineering Materials, 2015
[15] Thermo Mechanical Modeling of a Circular Shape Silicon Capacitive Pressure Sensors
A Beddiaf, F Kerrour, S Kemouche - praiseworthyprize.org, 2014
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