Capacitive Model and S-Parameters of Double-Pole Four-Throw Double-Gate RF CMOS Switch

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ISSN Print: 2152-2294
ISSN Online: 2152-2308
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"Capacitive Model and S-Parameters of Double-Pole Four-Throw Double-Gate RF CMOS Switch"
written by Viranjay M. Srivastava, Kalyan S. Yadav, Ghanashyam Singh,
published by Wireless Engineering and Technology, Vol.2 No.1, 2011

has been cited by the following article(s):

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[1]	Design and performance analysis of SiO2-MOSFET based absorber for reflected RF signal
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[2]	Design and analysis of MOSFET based absorber for 5G massive MIMO base station.
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[3]	FABRICATION AND TESTING OF DOUBLE-POLE FOUR-THROW SWITCH WITH N-MOSFETS
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[4]	Concept of Double-Pole Four-Throw Switch with n-MOSFETs
	2018

[5]	Design of Double-Pole Four-Throw RF Switch
	MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch. Springer International Publishing, 2014

[6]	Low Noise Amplifier for 2.45 GHz Frequency Band at 0.18 μm CMOS Technology for IEEE Standard 802.11 b/g WLAN
	International Journal of Intelligent Systems and Applications (IJISA) , 2012

[7]	Low Noise Amplifier for 2.45 GHz Frequency Band at 0.18 [micrometre] CMOS Technology for IEEE Standard 802.11 b/g WLAN
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[8]	DP4T RF CMOS Switch: A Better Option to Replace the SPDT Switch and DPDT Switch
	Recent Patents on Electrical & Electronic Engineering (Formerly Recent Patents on Electrical Engineering), 2012

[9]	Design and Noise Optimization of RF Low Noise Amplifier for IEEE Standard 802.11 a WLAN
	International Journal of VLSI design & Communication Systems (VLSICS), 2012

[10]	A 2.0 to 3.0 GHz CMOS low noise amplifier and its applications
	Engineering (NUiCONE), 2011 Nirma University International Conference on. IEEE, 2011

[11]	Design and performance analysis of cylindrical surrounding double-gate MOSFET for RF switch
	Microelectronics Journal. Elsevier, 2011

[1]	Concept of Double-Pole Four-Throw Switch with n-MOSFETs 2018 International Conference on Advanced Computation and Telecommunication (ICACAT), 2018 DOI:10.1109/ICACAT.2018.8933765

[2]	MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch Analog Circuits and Signal Processing, 2014 DOI:10.1007/978-3-319-01165-3_2

[3]	MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch Analog Circuits and Signal Processing, 2014 DOI:10.1007/978-3-319-01165-3_2

[4]	Design and performance analysis of cylindrical surrounding double-gate MOSFET for RF switch Microelectronics Journal, 2011 DOI:10.1016/j.mejo.2011.07.003

[5]	A 2.0 to 3.0 GHz CMOS low noise amplifier and its applications 2011 Nirma University International Conference on Engineering, 2011 DOI:10.1109/NUiConE.2011.6153277

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