Negative Magnetoresistance Behaviour and Variable Range Hopping Conduction in Insulating NbSi Amorphous Alloys at Very Low Temperature with aagnetic Field

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Journal of Modern Physics

ISSN Print: 2153-1196
ISSN Online: 2153-120X
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"Negative Magnetoresistance Behaviour and Variable Range Hopping Conduction in Insulating NbSi Amorphous Alloys at Very Low Temperature with aagnetic Field"
written by Abdelghani Sybous, Abdelhamid El Kaaouachi, Jamal Hemine, Abdelfattah Narjis, Lhoussine Limouny, Said Dlimi, Rachid Abdia, Gerard Biskupski,
published by Journal of Modern Physics, Vol.3 No.7, 2012

has been cited by the following article(s):

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[1]	Features in low-temperature electrical resistivity of amorphous Cd3As2 films due to hopping conductivity with changing activation energy Journal of Non-Crystalline Solids, 2021 DOI:10.1016/j.jnoncrysol.2021.121134

[2]	Features in low-temperature electrical resistivity of amorphous Cd3As2 films due to hopping conductivity with changing activation energy Journal of Non-Crystalline Solids, 2021 DOI:10.1016/j.jnoncrysol.2021.121134

[3]	Two-dimensional magneto-photoconductivity in non-van der Waals manganese selenide Materials Horizons, 2021 DOI:10.1039/D1MH00009H

[4]	Synthesis of Two-Dimensional Nb1.33C (MXene) with Randomly Distributed Vacancies by Etching of the Quaternary Solid Solution (Nb2/3Sc1/3)2AlC MAX Phase ACS Applied Nano Materials, 2018 DOI:10.1021/acsanm.8b00332

[5]	Dimensional Crossover Transport Induced by Substitutional Atomic Doping in SnSe2 Advanced Electronic Materials, 2018 DOI:10.1002/aelm.201700563

[6]	Synthesis of Two-Dimensional Nb1.33C (MXene) with Randomly Distributed Vacancies by Etching of the Quaternary Solid Solution (Nb2/3Sc1/3)2AlC MAX Phase ACS Applied Nano Materials, 2018 DOI:10.1021/acsanm.8b00332

[7]	Electrical, optical and magnetoresistive behavior of nanostructured ZnO:Cu thin films deposited by sputtering Journal of Materials Science: Materials in Electronics, 2018 DOI:10.1007/s10854-018-8854-1

[8]	Dimensional Crossover Transport Induced by Substitutional Atomic Doping in SnSe2 Advanced Electronic Materials, 2018 DOI:10.1002/aelm.201700563

[9]	Negative to positive crossover of the magnetoresistance in layered WS2 Applied Physics Letters, 2016 DOI:10.1063/1.4946859

[10]	Negative to positive crossover of the magnetoresistance in layered WS2 Applied Physics Letters, 2016 DOI:10.1063/1.4946859

[11]	Synthesis and characterization of nanostructured magnetoresistive Ni doped ZnO films Materials Science in Semiconductor Processing, 2015 DOI:10.1016/j.mssp.2015.02.067

[12]	Spin-glass and variable range hopping quantum interference magnetoresistance in FeSr2Y1.3Ce0.7Cu2O10−x Materials Research Express, 2014 DOI:10.1088/2053-1591/1/4/046112

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