"
Nonequilibrium Diffusion of Boron in SiC at Low Temperatures"
written by Iikham G. Atabaev, Tojiddin M. Saliev, Erkin N. Bakhranov, Dilmurad Saidov, Khimmatali Juraev, Chin C. Tin, Victor Adedeji, Bakhtiyar G. Atabaev, Nilufar G. Saidkhanova,
published by
Materials Sciences and Applications,
Vol.1 No.2, 2010
has been cited by the following article(s):
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[1]
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Research of p-i-n Junctions Based on 4H-SiC Fabricated by Low-Temperature Diffusion of Boron
Advances in Materials Science and Engineering,
2018
DOI:10.1155/2018/8797031
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[2]
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Spectral Dependence of Optical Absorption of 4H-SiC Doped with Boron and Aluminum
Journal of Spectroscopy,
2018
DOI:10.1155/2018/8705658
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[3]
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Fast Switching 4H-SiC P-i-n Structures Fabricated by Low Temperature Diffusion of Al
Advances in Condensed Matter Physics,
2017
DOI:10.1155/2017/7820676
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[4]
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Influence of Defects on Low Temperature Diffusion of Boron in SiC
Materials Sciences and Applications,
2011
DOI:10.4236/msa.2011.29163
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