TEM and STEM Observations of a Flat Continuous Silicon-Germanium Thin Film Epitaxially Grown on Porous Silicon - Journal of Materials Science and Chemical Engineering

MSCE > Vol.5 No.1, January 2017

TEM and STEM Observations of a Flat Continuous Silicon-Germanium Thin Film Epitaxially Grown on Porous Silicon ()

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DOI: 10.4236/msce.2017.51004 1,580 Downloads 2,533 Views

Author(s)

Junji Yamanaka¹, Noritaka Usami², Sevak Amtablian³, Alain Fave³, Mustapha Lemiti³, Chiaya Yamamoto^4,5, Kiyokazu Nakagawa¹

Affiliation(s)

¹Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan.
²Graduate School of Engineering, Nagoya University, Nagoya, Japan.
³Institut des Nanotechnologies de Lyon, site INSA-Lyon, Villeurbanne, France.
⁴Center for Creative Technology, University of Yamanashi, Kofu, Japan.
⁵Center for Instrumental Analysis, University of Yamanashi, Kofu, Japan.

ABSTRACT

Strain-relaxed SiGe is an attractive material for use as a substrate of strained Si, in which carrier mobility is higher than that of bulk Si. The concept of this study is the use of porous Si as a sponge like substrate so that a SiGe lattice can relax without introducing dislocations. We produced porous Si specimens by electrochemical anodization and annealed them under a H2 atmosphere. Then, SiGe thin films were grown by gas-source molecular beam epitaxy. We observed the microstructure of the specimens using transmission electron microscopy. The result showed that we succeeded in producing a single-crys- tal continuous Si0.73Ge0.27 film with a 10% relaxation ratio and a low dislocation density on porous Si.

KEYWORDS

Porous Silicon, Silicon Germanium, Strain Relaxation, Strained Silicon, Nanostructure, High-Mobility Semiconductors, Transmission Electron Microscopy

Share and Cite:

Yamanaka, J. , Usami, N. , Amtablian, S. , Fave, A. , Lemiti, M. , Yamamoto, C. and Nakagawa, K. (2017) TEM and STEM Observations of a Flat Continuous Silicon-Germanium Thin Film Epitaxially Grown on Porous Silicon. Journal of Materials Science and Chemical Engineering, 5, 26-34. doi: 10.4236/msce.2017.51004.

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