Author(s)

Huan-Yi Cheng¹, Ying-Chung Chen¹, Chi-Lun Li¹, Pei-Jou Li¹, Mau-Phon Houng², Cheng-Fu Yang^3*

¹Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung.
²Institute of Microelectronics, National Cheng-Kung University, Kaohsiung.
³Department of Chemical and Materials, National University of Kaohsiung, Kaohsiung.

At first, Cr-Si (28 wt% Cr, 72 wt% Si) and Ni-Cr (80 wt% Ni, 20 wt% Cr) thin-film materials were deposited by using sputtering method at the same parameters, and their physical and electrical properties were investigated. The resistances of Cr-Si and Ni-Cr thin-film resistors decreased with the increase of deposition time (thickness) and their resistivity had no apparent variations as the deposition time increased. The temperature coefficient of resistance (TCR) of single-layer Cr-Si thin-film resistors was negative and the TCR value of single-layer Ni-Cr thin-film resistors was positive. For that, we used Cr-Si thin films as upper (or lower) layer and Ni-Cr thin films as lower (upper) layer to investigate a bi-layer thin-film structure. The deposition time of Ni-Cr thin films was fixed at 10 min and the deposition time of Cr-Si thin films was changed from 10 min to 60 min. We had found that as Cr-Si thin films were used as upper or lower layers they had similar deposition rates. We had also found that the thickness and stack method of Cr-Si thin films had large effects on the resistance and TCR values of the bi-layer thin-film resistors.

Cr-Si, Ni-Cr, Sputtering Method, Sheet Resistance, Bi-Layer Structure

Cheng, H. , Chen, Y. , Li, C. , Li, P. , Houng, M. and Yang, C. (2016) Developments of Cr-Si and Ni-Cr Single-Layer Thin-Film Resistors and a Bi-Layer Thin-Film Resistor with Adjustable Temperature Coefficient of Resistor. Materials Sciences and Applications, 7, 895-907. doi: 10.4236/msa.2016.712068.