Author(s)

Dayane Habib^1*, Georges El Haj Moussa^1,2

¹Physics Department, Faculty of Sciences II, Lebanese University, Jdeidet, Lebanon.
²Centre Electronique et Micro-optoélectronique de Montpellier (CEM2), Faculté Sciences et Techniques du.

Bulk materials were synthesized by the Bridgman technique using the elements Cu, Ga, Se. These samples were characterized by Energy Dispersive Spectrometry (EDS) to determine the elemental composition, as well as by X-ray diffraction for structure, hot point probe method for type of conductivity. Optical response (Photoconductivity) and Photoluminescence (PL) and PL-excitation (PLE) at temperatures from 4.2 to 77 K were also used to estimate the band-gap energy of Cu-Ga₃Se₅. They show a nearly perfect stoechiometry and present p-type conductivity. CuGa₃Se₅ either have an Ordered Defect Chalcopyrite structure (ODC), or an Ordered Vacancy Chalcopyrite structure (OVC). The gap energy obtained by Photoconductivity and Photoluminescence (PL) for the different samples is 1.85 eV. Studying the variation of the gap as a function of the temperature shows that the transition is a D-A type. The defects that appear are probably Ga_Cu.

Chalcopyrite, Photovoltaic, Bulk Materials Photoluminescence, Optical Response, X-Ray Diffraction, Photoconductivity

Habib, D. and Moussa, G. (2016) Crystal Growth, Structural and Optical Studies of CuGa₃Se₅ Bulk Compounds. World Journal of Condensed Matter Physics, 6, 27-34. doi: 10.4236/wjcmp.2016.61004.