Author(s)

Haruhisa Kinoshita^*, Sho Suzuki, Ryouhei Taguchi, Hiroki Takeuchi

Department of Electrical and Electronic Engineering, Graduate School of Engineering, Shizuoka University, Hamamatsu, Japan.

Hydrogenated amorphous carbon nitride (a-CNx:H) films were formed on p-Si, Al films deposited on n-Si (Al/n-Si) and glass (SiO₂) (Al/glass) substrates, using pulsed rf supermagnetron plasma chemical vapor deposition (CVD) with N₂/i-C₄H₁₀ mixed gases. The rf powers (13.56 MHz) of both the upper and lower electrodes were modulated by a 2.5-kHz pulse at a duty ratio of 12.5%. N₂ gas concentration was controlled at 70%. The optical band gap of a-CN_x:H films was about 0.75 eV. The a-CN_x:H films deposited on substrates of p-Si, Al/n-Si and Al/glass showed low threshold emission electric fields (E_TH) of 10, 13 and 12 V/μm, respectively. The a-CN_x:H film deposited on low-cost Al film (Al/glass) showed a sufficiently low E_TH of 12 V/μm, eliminating the need for high-cost p-Si substrates.

Supermagnetron Plasma, Chemical Vapor Deposition, Amorphous Carbon Nitride, Field Emission

Kinoshita, H. , Suzuki, S. , Taguchi, R. and Takeuchi, H. (2015) Field Electron-Emission from a-CN_x:H Films Formed on Al Films Using Supermagnetron Plasma CVD. Journal of Modern Physics, 6, 1602-1608. doi: 10.4236/jmp.2015.611162.