Author(s)

A. Elwhab B. Alwany^1*, O. M. Samir¹, Mohammed A. Algradee¹, M. M. Hafith², M. A. Abdel-Rahim²

¹Physics Department, Faculty of Science, Ibb University, Ibb, Yemen.
²Physics Department, Faculty of Science, Assuit University, Assuit, Egypt.

Glassy substrates TeSeSn thin films were thermally evaporated onto chemically cleaned glass. The as-deposited (as-prepared) and annealed thin films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and optical transmission. The optical absorption of the as-prepared and annealed TeSeSn thin films is studied in the wavelength range of 300 nm - 900 nm. The direct optical energy gap (E_g) increases from 1.989 to 2.143 eV with increasing the thickness of the as-prepared films from 100 to 200 nm. The annealed TeSeSn films showed a decrease in the optical energy gap with increasing the annealing temperature. The effect of heat treatment on the lattice dielectric constant (ε_L) and carrier concentration (N) are also studied.

Thin Film, Film Thickness, Annealing Temperature, Optical Properties

Alwany, A. , Samir, O. , Algradee, M. , Hafith, M. and Abdel-Rahim, M. (2015) Investigation of the Effect of Film Thickness and Heat Treatment on the Optical Properties of TeSeSn Thin Films. World Journal of Condensed Matter Physics, 5, 220-231. doi: 10.4236/wjcmp.2015.53023.