Author(s)

Dayane Habib^1*, Ouloum Aoudé², Slyman Karishy¹, Georges El Haj Moussa^1,3

¹Physics Department, Faculty of Sciences II, Lebanese University, Jdeidet, Lebanon.
²Physics Department, Faculty of Sciences IV, Lebanese University, Zahleh, Lebanon.
³Centre Electronique et Micro-optoélectronique de Montpellier (CEM2), Faculté Sciences et Techniques du Languedoc Université de Montpellier II, Montpellier, France.

The present work prepared the CuIn₃Se₅ ingots by using a horizontal Bridgman method and investigated the Energy Dispersive Spectrometry (EDS) and X-Ray Diffraction (XRD) to calculate the compositions of the ingots. Photoluminescence was used to check their optical properties. It was found that CuIn₃Se₅ had either a Stanite structure, an Ordered Defect Chalcopyrite (ODC) structure, or an Ordered Vacancy Chalcopyrite (OVC) structure. The gap energy obtained by Photoluminescence (PL) for the different samples is 1.23 eV. Studying the variation of the gap as a function of the temperature shows that the transition is a D-A type.

Chalcopyrite, Photovoltaic, Photoluminescence, Optical Response, X-Ray Diffraction

Habib, D. , Aoudé, O. , Karishy, S. and Moussa, G. (2015) Fabrication, Characterization and Optical Properties of CuIn₃Se₅ Bulk Compounds. World Journal of Condensed Matter Physics, 5, 201-208. doi: 10.4236/wjcmp.2015.53021.