Author(s)

Michel Saydé, Ahmed Lakhssassi, Emmanuel Kengne, Roman Palenichka

Department of Computer Sciences and engineering, University of Quebec at Outaouais, Gatineau, Canada.

In this paper, we describe a new silicon-die thermal monitoring approach using spatiotemporal signal processing technique for Wafer-Scale IC thermome- chanical stress monitoring. It is proposed in the context of a wafer-scale-based (WaferICTM) rapid prototyping platform for electronic systems. This technique will be embedded into the structure of the WaferIC, and will be used as a preventive measure to protect the wafer from possible damages that can be caused by excessive thermomechanical stress. The paper also presents spatial and spatiotemporal algorithms and the experimental results from an IR images collection campaign conducted using an IR camera.

Thermal Monitoring; Ring Oscillator (RO); Spatial; Spatiotemporal; Thermo-Mechanical Stress; Temperature Sensor; Thermal Analysis; WaferIC; Wafer-Scale System

Saydé, M. , Lakhssassi, A. , Kengne, E. and Palenichka, R. (2013) A spatiotemporal signal processing technique for wafer-scale IC thermomechanical stress monitoring by an infrared camera. Journal of Biosciences and Medicines, 1, 1-5. doi: 10.4236/jbm.2013.12001.