Preparation of High Ga Content Cu(In,Ga)Se2 Thin Films by Sequential Evaporation Process Added In2S3

HTML  Download Download as PDF (Size: 761KB)  PP. 106-109  
DOI: 10.4236/ampc.2012.24B029    3,269 Downloads   5,030 Views  Citations

ABSTRACT

High Ga content Cu(In,Ga)Se2 thin films incorporated sulfur were prepared by sequential evaporation from CuGaSe2 and CuInSe2 ternary compounds and subsequently Ga2Se3, In2Se3 and In2S3 binary compounds. The In2S3/(Ga2Se3+ In2Se3) ratio was varied from 0 to 0.13, and the properties of the thin films were investigated. XRD studies demonstrated that the prepared thin films had a chalcopyrite Cu(In,Ga)Se2 structure. The S/(Se+S) mole ratio in the thin films was within the range from 0 to 0.04. The band gaps of Cu(In,Ga)Se2 thin films increased from 1.30 eV to 1.59 eV with increasing the  In2S3 /(Ga2Se3+ In2Se3) ratio.

Share and Cite:

T. Yamaguchi, K. Tsujita, S. Niiyama and T. Imanishi, "Preparation of High Ga Content Cu(In,Ga)Se2 Thin Films by Sequential Evaporation Process Added In2S3," Advances in Materials Physics and Chemistry, Vol. 2 No. 4B, 2012, pp. 106-109. doi: 10.4236/ampc.2012.24B029.

Copyright © 2024 by authors and Scientific Research Publishing Inc.

Creative Commons License

This work and the related PDF file are licensed under a Creative Commons Attribution 4.0 International License.