Author(s)

Amaria Ould-Abbas, Mama Bouchaour, Nasr-Eddine Chabane Sari

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Research Unit Materials and Renewable Energy (RUMRE), University of Abou Bekr BELKAID of Tlemcen, Tlemcen, Algeria.

In this work, we are interesting in the measurement of thermal conductivity (on the surface and in-depth) of Porous silicon by the micro-Raman spectroscopy. This direct method (micro-Raman spectroscopy) enabled us to develop a systematic means of investigation of the morphology and the thermal conductivity of Porous silicon oxidized or no. The thermal conductivity is studied according to the parameters of anodization and fraction of silicon oxidized. Thermal transport in the porous silicon layers is limited by its porous nature and the blocking of transport in the silicon skeleton what supports its use in the thermal sensors.

Mono-Crystal Silicon; Porous Silicon; Thermal Conductivity; Micro-Raman Spectroscopy

A. Ould-Abbas, M. Bouchaour and N. Sari, "Study of Thermal Conductivity of Porous Silicon Using the Micro-Raman Method," Open Journal of Physical Chemistry, Vol. 2 No. 1, 2012, pp. 1-6. doi: 10.4236/ojpc.2012.21001.