Prof. Harry E. Ruda

University of Toronto, Canada




1982 Ph.D., Massachusetts Institute of Technology, USA, Semiconductor Materials and Solid State Physics

1979 B.Sc., London University, England, Materials Physics

Publications (Selected)

  1. A. Shik, C. Fernandes and H.E. Ruda, "Hall Effect in nanowires", J. Appl. Phys., (2014): Accepted, JR14-5081R
  2. A. Chen, B.-B. Li, B. Miljkovic, C. de Souza, K.Zhu, and H.E. Ruda, "Improving the oxidation potential of Sb-doped SnO2electrode by Zn/Sb co-doping",Applied Phys. Lett., Accepted (2014)
  3. Y. Song, W. Yin, Y.-H. Wang, J.-P. Zhang, Y. Wang, R. Wang, J. Han, W. Wang, S.V. Nair and H.E. Ruda, "Magneto-Plasmons in Periodic Nanoporous Structures", Nature: Scientific Reports, 4, 4991 (2014)
  4. Y.Song, W.Yin, C.Fernandes and H.E.Ruda, “Fabrication of one-dimension ZnSe and ZnO nanostructures via anodic alumina template assisted vapor-liquid-solid growth process”, Thin Solid Films, 548, 130 (2013)
  5. Y.Song, Y.Wang, B.B.Li, C.Fernandes and H.E.Ruda, “Interface interaction induced ultra-dense nanoparticles assemblies”, Nanoscale, 5, 6779 (2013)
  6. T.V.C. Rao, S.V. Nair, H.E. Ruda, J. Antoszewski, J.B. Rodriguez, E. Plis, S. Krishna and L. Faraone, "Electrical transport in InAs/GaSb superlattice: Role of surface states and interface roughness", Semi. Sci. Technol., 27, 105025 (2012)
  7. B. Qiao, K. Song, H.E. Ruda, "Characteristics of coherence and information for a Davydov soliton field", J. Modern Phys., 3, 1907 (2012)
  8. A. Hayat, P. Zareapour, S.Y. Zhao, A. Jain,I.Savelyev, M . Blumin, Z.Xu, A. Yang, G.D. Gu, H.E. Ruda, A.M. Steinberg, and K.S. Burch, "Hybrid high temperature superconductor-semiconductor tunnel diode", Phys. Rev. X2, 041019 (2012)
  9. C. Fernandes, H. Ruda, A. Saxena and C. de Souza, "Preparation of high quality ZnSe nanowires dominated by excitonic emission", Phys. Stat. Sol. C9, 2460 (2012)
  10. C.Y. Chen, A. Shik, A. Pitani, A. Treducucci, D. Ercolani, L. Sorba, F. Beltram and H.E. Ruda, "Electron beam induced current in InSb-InAs nanowire type III heterostructures", Appl. Phys. Lett., 101, 063116 (2012)
  11. B.B. Li,U. Philipose,C.F. de Souza and H.E. Ruda, "Role ofElectro-Deposition Parameters on Preparing Tailored Dimension Vertically-Aligned ZnO Nanowires”, J. Electrochem. Soc., 158, D282 (2011)
  12. Y. Sun, Rusli, M. Yu, J. Salfi, C. de Souza, H.E. Ruda, N. Singh, F.K. Lin, P. Lo, D.L. Kwong, “Electrical characteristics and photocurrent spectralresponse of Si nanowires p-i-n junctions” Optics Express, 19, 5464 (2011)
  13. H. Ruda and A. Shik, “Optical properties ofanisotropic porous semiconductors", Appl. Phys. Lett., 99, 213111 (2011)
  14. R. Cisek, V. Barzda, H.E. Ruda, and A. Shik, “Nonlinear optical properties of semiconductor nanowires”, (Invited) IEEE J. Sel. Topics in Quant. Electron., PP(99), 1(2010)
  15. B. Liu, F. Yan, U. Philipose, N.P. Kherani, W. Shmayda, K.P. Chen and H.E. Ruda, “Tritium beta-luminescence in ZnO nanowires”, J. Phys. D: Appl. Phys., 43, 415502(2010)
  16. H. Wan and H. Ruda, “A study of the growthmechanism of CVD grown ZnO nanowires”, J. Mats. Sci.: Mater. Electron., 21, 1014(2010)
  17. Z. Li, J. Salfi, C. de Souza, P. Sun, S.V. Nair and H.E. Ruda, ”Room temperature single nanowire ZnTe photoconductors grown by metalorganic chemical vapor deposition”, Appl. Phys. Lett., 97, 063510(2010)
  18. A. Othonos, E. Lioudakis, D. Tsokkou, U. Philipose, H.E. Ruda, “Ultrafast time-resolved spectroscopy of ZnSe nanowires: Carrierdynamics of defect-related states”, J. Alloys and Compounds, 483, 600(2009)
  19. T. Xu, M.S. Wheeler, H.E. Ruda, M. Mojahedi, and J.S. Aitchison, " The influence of material absorption on the quality factor of photonic crystal cavities", Optics Express, 17, 8343 (2009)
  20. T. Xu, M.S. Wheeler, S.V. Nair, H.E. Ruda, M. Mojahedi and J.S. Aitchison, “Highly confined mode above the light line in a two dimensionalphotonic crystal slab”, Appl. Phys. Lett., 93, 241105(2008)
  21. A. Petukhova, A.S. Paton, Z. Wei, I. Gourevich, S.V. Nair, H.E. Ruda, A. Shik and E. Kumacheva, “Polymer multilayer microspheresloaded with semiconductor quantum dots”, Adv. Functional Mater., 18, 1961(2008)

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