Biography

Prof. Harry E. Ruda

Edward S. Rogers Sr. Department of Electrical and Computer Engineering

Centre for Advanced Nanotechnology, Department of Materials Science and Engineering

University of Toronto, Canada

Professor


Email: harry.ruda@utoronto.ca


Qualifications

1983–1984 Postdoc., Massachusetts Institute of Technology (MIT) and IBM Yorktown Heights, Semiconductor Physics

1979–1982 Ph.D., Massachusetts Institute of Technology (MIT), Semiconductor Materials and Solid State Physics

1976–1979 B.Sc., Imperial College of Science and Technology, London University, Materials Physics


Publications (selected)

  1. H. Ruda and A. Shik, “Optical properties of anisotropic porous semiconductors", Appl. Phys. Lett., 99, 213111 (2011).
  2. H. Ruda and A. Shik, “Polarization of conducting nanoparticles", J. Appl. Phys., 110, 084314(2011).
  3. K.L. Kavanagh, I. Saveliev, M. Blumin, G. Swadener and H.E. Ruda, “Faster radial strain relaxation in InAs–GaAs core–shell heterowires”, J. Appl. Phys., 111, 044301 (2012).
  4. R. Cisek, V. Barzda, H.E. Ruda, and A. Shik, “Nonlinear optical properties of semiconductor nanowires”, (Invited) IEEE J. Sel. Topics in Quant. Electron., 17, 915(2011).
  5. Y. Sun, Rusli, M. Yu, J. Salfi, C. de Souza, H.E. Ruda, N. Singh, F.K. Lin, P. Lo, D.L. Kwong, “Electrical characteristics and photocurrent spectral response of Si nanowires p-i-n junctions” Optics Express, 19, 5464 (2011).
  6. K.L. Kavanagh, J. Salfi, I. Savelyev, M. Blumin, and H.E. Ruda and, “Transport and strain relaxation in wurtzite InAs-GaAs core-shell nanowires”, Appl. Phys. Lett., 98, 152103 (2011).
  7. H.E. Ruda and A. Shik, “Principles of nanowire alignment in an electric field”, J.Appl. Phys., 109, 064305 (2011).
  8. J. Salfi, N. Paradiso, S. Roddaro, S. Heun, S.V. Nair, I.G. Savelyev, M. Blumin, F. Beltram and H.E. Ruda, “Probing the Gate−Voltage-Dependent Surface Potential of Individual InAs Nanowires Using Random Telegraph Signals”, ACS Nano, 5, 2191 (2011).
  9. G. Liu, B. Qiao and H.E. Ruda, “Gaussian channel in a quantum information network”, J. Appl. Phys. , 109, 054908 (2011).
  10. R. Cisek, V. Barzda, H.E. Ruda, and A. Shik, “Nonlinear optical properties of semiconductor nanowires”, (Invited) IEEE J. Sel. Topics in Quant. Electron., PP(99), 1(2010).
  11. B. Liu, F. Yan, U. Philipose, N.P. Kherani, W. Shmayda, K.P. Chen and H.E. Ruda, “Tritium beta-luminescence in ZnO nanowires”, J. Phys. D: Appl. Phys., 43, 415502(2010).
  12. B.B. Li, U. Philipose, C.F. de Souza and H.E. Ruda, “Role of Electro-Deposition Parameters on Preparing Tailored Dimension Vertically-Aligned ZnO Nanowires”, J. Electrochem. Soc., 158, D282 (2011).
  13. H. Wan and H. Ruda, “A study of the growth mechanism of CVD grown ZnO nanowires”, J. Mats. Sci.: Mater. Electron., 21, 1014(2010).
  14. Z. Li, J. Salfi, C. de Souza, P. Sun, S.V. Nair and H.E. Ruda, “Room temperature single nanowire ZnTe photoconductors grown by metalorganic chemical vapor deposition”, Appl. Phys. Lett., 97, 063510(2010).
  15. J. Salfi, I. Savelyev, M. Blumin, S.V. Nair and H.E. Ruda, “Direct observation of single charge detection capability of nanowire field effect transistors”, Nature Nanotechnology, 5, 737 (2010)
  16. H. Ruda and A. Shik, “Nanorod dynamics in ac electric fields”, Nanotechnology, 21, 235502(2010).
  17. C. deSouza, , A. Alizadeh, S. Nair, I. Saveliev, M. Blumin, H.E. Ruda,D. Hays, V.H. Watkins, K.R. Conway and E. Braunstein, “Mechanism of IR response in nanopatterned InAs/GaAs quantum dot p-i-n photodiodes”, IEEE J. Quant. Electron., 46(5), 832(2010).
  18. U. Philipose, G. Sapkota, J. Salfi and H. Ruda, “Influence of growth temperature on the stoichiometry of InSb nanowires grown by vapor phase transport”, Semic. Sci. Technol., 25, 075004(2010).
  19. Petukhova, A.S. Paton, I. Gourevuch, S.V. Nair, H. Ruda, A. Shik, and E. Kumacheva, “Hybrid microspheres with alternating layers of polymer and metal nanoparticles”, Can. J. Chem., 88, 298(2010).
  20. T. Xu, N. Zhu, M.Y.C. Xu, L. Wosinski, J.S. Aitchison and H. Ruda, “Pillar array based optical sensor”, Optics Express, 18, 5420(2010).
  21. J. Salfi, S. Roddaro, D. Ercolani, L. Sorba, I. Savelyev, M. Blumin, H.E. Ruda and F. Beltram, “Electronic properties of quantum dot systems realized in semiconductor nanowires”, (Invited Review), Semic. Sci. Technol., 25, 024007(2010).
  22. Othonos, E. Lioudakis, D. Tsokkou, U. Philipose, H.E. Ruda, “Ultrafast time-resolved spectroscopy of ZnSe nanowires: Carrier dynamics of defect-related states”, J. Alloys and Compounds, 483, 600(2009).
  23. T. Xu, N. Zhu, M.Y.C. Xu, L. Wosinski, J.S. Aitchison and H.E. Ruda, “A pillar array based two dimensional photonic crystal microcavity”, Appl. Phys. Lett., 94(24), 241110(2009).
  24. M. Sugisaki, M. Fujiwara, S.V. Nair, H.E. Ruda, R.J. Cogdell and H. Hashimoto, “Excitation-energy dependence of transient grating spectroscopy inb-carotene”, Phys. Rev., B80, 035118(2009).
  25. Z.H. Nei, D. Fava, E. Kumacheva, H.E. Ruda, A. Shik, “Plasmon spectra in two dimensional nanorod arrays”, Nanotechnology,20, 295203(2009).
  26. T.J. Spencer, R. Cisek, V. Barzda, U. Philipose, H.E. Ruda and A. Shik, “Orientation dependent nonlinear optical effects in ZnSe nanowires”, Appl. Phys. Lett., 94, 233119(2009).
  27. Alizadeh, D. Hays, C. Keimel,V.H. Watkins, K.R. Conway, S.T. Taylor, R. Neander, L. Denault,C. deSouza,I. Saveliev, M. Blumin, H.E. Ruda, E. Braunstein and C. Jones, “Infrared p-i-n diodes based on InAs quantum dots grown on 20 nm patterned GaAs”, Appl. Phys. Lett., 94, 163112 (2009).
  28. Alizadeh, D. Hays, S.T. Taylor, C. Keimel, K.R. Conway, L. Denault, K. Krishnan, V.H. Watkins, R. Neander, J.S. Brown, A. Stintz, S. Krishna, M. Blumin, I. Saveliev, H.E. Ruda, E.Braunstein and C. Jones, “Epitaxial growth of 20 nm InAs and GaAs quantum dots on GaAs through block copolymer template SiO2 masks”, J. Appl. Phys., 105, 054305(2009).
  29. H. Ruda, J. Salfi, U. Philipose, A. Saxena, K.T. Lau, T. Xu, L. Zhong, C. deSouza, S. Aouba, S. Yang, P. Sun, S. Nair and C. Fernandes, “Transport and optical response of single nanowires”, J Mater Sci: Mater Electron., 20, S480(2009).

Profile Details

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