Graphene

Vol.2 No.1(2013), Paper ID 27065, 5 pages

DOI:10.4236/graphene.2013.21008

 

Effect of Growth Morphology on the Electronic Structure of Epitaxial Graphene on SiC

 

Michael D. Williams, Dennis W. Hess

 

Center of Excellence in Microelectronics and Photonics, Department of Physics, Clark Atlanta University, Atlanta, USA
School of Chemical and Biomolecular Engineering, Georgia Institute of Technology, Atlanta, USA

 

Copyright © 2013 Michael D. Williams, Dennis W. Hess et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

 

How to Cite this Article


M. Williams and D. Hess, "Effect of Growth Morphology on the Electronic Structure of Epitaxial Graphene on SiC," Graphene, Vol. 2 No. 1, 2013, pp. 55-59. doi: 10.4236/graphene.2013.21008.

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