Materials Sciences and Applications

Vol.3 No.12(2012), Paper ID 25403, 5 pages

DOI:10.4236/msa.2012.312122

 

Optoelectronic Properties of GaN-Based Light-Emitting Diodes with Different Mesa Structures

 

Xueyun Song, Xianghua Zeng, Junbin Zhang, Yuzhe Jin, Xiangdong Meng

 

College of Physics & Technology, Yangzhou University, Yangzhou, China
College of Physics & Technology, Yangzhou University, Yangzhou, China
College of Physics & Technology, Yangzhou University, Yangzhou, China
College of Physics & Technology, Yangzhou University, Yangzhou, China
College of Physics & Technology, Yangzhou University, Yangzhou, China

 

Copyright © 2012 Xueyun Song, Xianghua Zeng, Junbin Zhang, Yuzhe Jin, Xiangdong Meng et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

 

How to Cite this Article


X. Song, X. Zeng, J. Zhang, Y. Jin and X. Meng, "Optoelectronic Properties of GaN-Based Light-Emitting Diodes with Different Mesa Structures," Materials Sciences and Applications, Vol. 3 No. 12, 2012, pp. 838-842. doi: 10.4236/msa.2012.312122.

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