Optics and Photonics Journal
Vol.2 No.3(2012), Paper ID 22501, 4
pages
DOI:10.4236/opj.2012.23028
Enhancement in Light Extraction Efficiency of GaN-Based Light-Emitting Diodes Using Double Dielectric Surface Passivation
Chung-Mo Yang, Dong-Seok Kim, Yun Soo Park, Jae-Hoon Lee, Yong Soo Lee, Jung-Hee Lee
School of Electrical Engineering and Computer Science Kyungpook National University, Daegu, Republic of Korea
School of Electrical Engineering and Computer Science Kyungpook National University, Daegu, Republic of Korea
School of Electrical Engineering and Computer Science Kyungpook National University, Daegu, Republic of Korea
GaN Power Research Group, R&D Institute, Samsung LED Co., Ltd, Suwon, Republic of Korea
School of Electrical Engineering and Computer Science Kyungpook National University, Daegu, Republic of Korea
School of Electrical Engineering and Computer Science Kyungpook National University, Daegu, Republic of Korea
Copyright © 2012 Chung-Mo Yang, Dong-Seok Kim, Yun Soo Park, Jae-Hoon Lee, Yong Soo Lee, Jung-Hee Lee et al. This is
an open access article distributed under the Creative Commons Attribution
License, which permits unrestricted use, distribution, and reproduction in any
medium, provided the original work is properly cited.
How to Cite this Article
Yang, C. , Kim, D. , Park, Y. , Lee, J. , Lee, Y. and Lee, J. (2012) Enhancement in Light Extraction Efficiency of GaN-Based Light-Emitting Diodes Using Double Dielectric Surface Passivation.
Optics and Photonics Journal,
2, 185-192. doi:
10.4236/opj.2012.23028.