On the Performance of ISFET-based Device for Water Quality Monitoring
Pawan Whig, Syed Naseem Ahmad
DOI: 10.4236/ijcns.2011.411087   PDF    HTML     5,927 Downloads   11,522 Views   Citations


A new configuration realizing water quality monitoring device using ISFET involving low power CMOS Integrated “Ion Sensitive Field Effect transistor (ISFET) – Operational Amplifier is presented. The study’s main focus is on simulation of power and performance analysis of ISFET device, which is used for water quality monitoring. This approach can improve calibration of device to a fairly wide range without the use of a high speed digital processor. The conventional device has a drawback of slow slew rate but in this novel design, the device has a better slew rate. A new slew rate enhancement (SRE) incorporated into a ISFET, which does not affect the small signal frequency response. The functionality of the circuit is tested using Tanner simulator version 15 for a 70nm CMOS process model also the transfer function realization is done on MATLAB R2011a version, the Very high speed integrated circuit Hardware description language(VHDL) code for the same scheme is simulated on Xilinx ISE 10.1 and various simulation results are obtained. Simulation results are included to demonstrate the results.

Share and Cite:

P. Whig and S. Ahmad, "On the Performance of ISFET-based Device for Water Quality Monitoring," International Journal of Communications, Network and System Sciences, Vol. 4 No. 11, 2011, pp. 709-719. doi: 10.4236/ijcns.2011.411087.

Conflicts of Interest

The authors declare no conflicts of interest.


[1] C. Jimenez-Jorquera, J. Orozoo, A. Baldi, “ISFET Based Microsensors for Environmental Monitoring,” Journal of Sensors, Vol. 10, No. 1, 2010, pp. 61-83.
[2] F. M. Klaassen and W. Hes, “On the Temperature Coefficient of the MOSFET Threshold Voltages,” Solid-State Electronics, Vol. 29, No. 8, 1986, pp. 787-789. doi:10.1016/0038-1101(86)90180-2
[3] [Online]. http://www.freedrinkingwater.com/water-education/quality-water-ph.htm.
[4] P. Bergveld, “Development of an Ion-Sensitive Solid- State Device for Neurophysiologic Measurements,” IEEE Transactions on Biomedical Engineering, Vol. 17, No. 1, 1970, pp. 70-71. doi:10.1109/TBME.1970.4502688
[5] D. M. Wilson, S. Hoyt, J. Janata, K. Booksh and L. obando, “Chemical Sensors for Portable ,Handheld Field Instruments,” IEEE Sensors Journal, Vol. 1, No. 4, 2001, pp. 256-274. doi:10.1109/7361.983465
[6] P. Bergveld, “Thirty Years of ISFETOLOGY What Happened in the Past 30 Years and What May Happen in the Next 30 Years,” Sensors and Actuators B: Chemical, Vol. 88, No. 1, 2000, pp. 1-20. doi:10.1016/S0925-4005(02)00301-5
[7] S. jamasb, S. D. Collins and R. L Smith, “A Physiccal Model for Threshold Voltage Insability in SI3N4 Gate H+ Sensitive FETs,” IEEE Tranactions on Electron Devices, Vol. 45 No. 6, 1998, pp. 1239-1245. doi:10.1109/16.678525
[8] L. J Bousse, D. Hafeman and N. Tran, “Time Dependence of the Chemical Response of Silicon Nitride Surfaces,” Sensors and Actuators B: Chemical, Vol. 1, No. 1-6, 1991, pp. 361-367.
[9] P. R. Barabash, R. S. C Cobbold and W. B. Wlodarski, “Analysis of the Threshold Voltage and Its Temperature Dependence in Electrolyte-in Sulator—Semiconductor Field Effect Transistor,” IEEE Transactions on Electronic Devices, Vol. 34, No. 6, 1987, pp. 1271-1282. doi:10.1109/T-ED.1987.23081
[10] N. S. Haron, M. K. B. Mahamad, I. A. Aziz and M. Mehat, “A System Architecture for Water Quality Monitoring System Using Wired Sensors,” International Symposium on Information Technology, Kuala Lumpur, 26-28 August 2008, pp. 1-7. doi:10.1109/ITSIM.2008.4631927
[11] S. Martinoia and G. Massobrio, “A Behaviour Macro-Model of the ISFET in SPICE,” Sensors and Actuators B: Chemical, Vol. 62, No. 3, 2002, pp. 182-189. doi:10.1016/S0925-4005(99)00377-9
[12] B. Palan, F. V. Santos and J. M. Karam, “New ISFET Sensor Interface Circuit for Biomedical Applications,” Sensors and Actuators B: Chemical, Vol. 57, No. 1-3, 1999, pp. 63-68. doi:10.1016/S0925-4005(99)00136-7
[13] C. H. Yang, W. Y. Chung, K. K. Lin, D. G. Pijanowska and W. Torbicz, “A Low-Power Telemetric System De- sign for ISFET-Based Sensor Array Applications,” 16th European Conference on Circuit Theory and Design, Kraków, 1-4 September 2003, pp. 260-263.
[14] A. Morgenshtein, L. Sudakov-Boreysha and U. Dinnar, “CMOS Readout Circuitry for ISFET Micro-Systems,” Sensors and Actuators B: Chemical, Vol. 97, No. 1, 2004, pp. 122-131. doi:10.1016/j.snb.2003.08.007
[15] R. E. G. Van Hal, J. C. T. Eijkel and P. Bergveld, “A Novel Description of ISFET Sensitivity with the Buffer Capacity and Double-Layer Capacitance as Key Parame- ters,” Sensors and Actuators B: Chemical, Vols. 24-25, No. 1-3, 1995, pp. 201-205. doi:10.1016/0925-4005(95)85043-0
[16] Y.-H. Chang, Y.-S. Lu, Y.-L. Hong, S. Gwo and J. A. Yeh, “Highly Sensitive pH Sensing Using an Indium Nitride Ion-Sensitive Field-Effect Transistor,” Vol. 11, No. 5, 2011, pp. 1157-1161.
[17] M. Lindquist and P. Wide, “New Sensor System for Drinking Water Quality,” Proceedings the ISA/IEEE Sensors for Industry Conference, New Orleans, August 2004, pp. 30-34.
[18] R. M. Wen, Z. L. Zhu and S. L. Chen, “Preparation of high purity water with low concentration of dissolved oxygen (DO) and total organic carbon (TOC) for VLSI process,” Proceeding of 6th International Conference Solid-State and Integrated-Circuit Technology, Shanghai, 22-25 October 2001, p. 475-476.
[19] T.-Z. Qiao and L. Song, “The Design of Multi-Parameter Online Monitoring System of Water Quality Based on GPRS,” 2010 International Conference on Multimedia Technology, Ningbo, 29-31 October 2010, pp. 1-3. doi:10.1109/ICMULT.2010.5631313
[20] B. R. Jean, “A Microwave Sensor for Steam Quality,” IEEE Transactions on Instrumentation and Measurement, Vol. 57, No. 4, 2008, pp. 751-754. doi:10.1109/TIM.2007.913821
[21] J. C. Chou, H. M. Tsai, C. N. Shiao and J. S. Lin, “Study and Simulation of the Drift Behavior of Hydrogenated Amorphous Silicon Gate pH-ISFET,” Sensors and Actuators B: Chemical, Vol. 62, No. 2, 2000, pp. 97-101. doi:10.1016/S0925-4005(99)00366-4
[22] S. Casans, A. E. Navarro, D. Ramirez, J. M. Espi, N. Abramova and A. Baldi, “Instrumentation System to Improve ISFET Behaviour,” Proceeding of 19th IEEE Instrumentation and Measurement Technology Conference, Anchorage, 21-23 May 2002, pp. 1291-1294.
[23] S. Jamasb, “An Analytical Technique for Counteracting Drift in Ion-Selectivefield Effect Transistors (ISFETs),” IEEE Sensors Journal, Vol. 4, No. 6, 2004, pp. 795-801. doi:10.1109/JSEN.2004.833148

Copyright © 2024 by authors and Scientific Research Publishing Inc.

Creative Commons License

This work and the related PDF file are licensed under a Creative Commons Attribution 4.0 International License.