Dopant Implantation into the Silicon Substrate with Non-Planar Surface ()
Abstract
The influence of technological process parameters (aiming angle and implantation energy) on the distributions of dopant concentrations in a silicon substrate is investigated by computer modeling.
Share and Cite:
G. Tarnavsky and E. Vorozhtsov, "Dopant Implantation into the Silicon Substrate with Non-Planar Surface,"
Energy and Power Engineering, Vol. 2 No. 2, 2010, pp. 73-77. doi:
10.4236/epe.2010.22011.
Conflicts of Interest
The authors declare no conflicts of interest.
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