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Using LDMOS Transistor in Class-F Power Amplifier For WCDMA Applications

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DOI: 10.4236/ijcns.2011.410081    5,228 Downloads   10,300 Views   Citations

ABSTRACT

The fundamental operating principle of a Class F power amplifier and the factors aiding or affecting Class F performance were explicated previously. A Class F power amplifier design which satisfies WCDMA specifications is explained in this paper. The Class F amplifier was designed by employing Motorola’s LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor models and we simulated its performance by means of ADS. A variety of procedures were applied in the process of designing Class F amplifier, namely, DC simulation, bias point selection, source-pull and load-pull characterization, input and output matching circuit design and the design of suitable harmonic traps, which are explained here.

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

M. Sabaghi, S. Hadianamrei, M. Rahnama and M. Lahiji, "Using LDMOS Transistor in Class-F Power Amplifier For WCDMA Applications," International Journal of Communications, Network and System Sciences, Vol. 4 No. 10, 2011, pp. 662-666. doi: 10.4236/ijcns.2011.410081.

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