Numerical Simulations of Nonlinear Interaction of Space Charge Waves in Microwave and Millimeter Wave Range in n-InN Films Using Negative Differential Conductivity


Numerical simulations of nonlinear interaction of space charge waves in microwave and millimeter wave range in n-InN films have been carried out. A micro- and millimeter-waves frequency conversion using the negative differential conductivity phenomenon is carried out when the harmonics of the input signal are generated. An increment in the amplification is observed in n-InN films at essentially at high-frequencies f < 450 GHz, when compared with n-GaAs films f < 44 GHz. This work provides a way to achieve a frequency conversion and amplification of micro- and millimeter-waves.

Share and Cite:

Garcia-Barrientos, A. and Grimalsky, V. (2014) Numerical Simulations of Nonlinear Interaction of Space Charge Waves in Microwave and Millimeter Wave Range in n-InN Films Using Negative Differential Conductivity. Modeling and Numerical Simulation of Material Science, 4, 136-142. doi: 10.4236/mnsms.2014.43015.

Conflicts of Interest

The authors declare no conflicts of interest.


[1] Wu, J., Walukiewicz, W., Shan, W., Yu, K.M., Ager III, J.W., Haller, E.E., Lu, H. and Schaff, W.J. (2002) Effects of the Narrow Band Gap on the Properties of InN. Physical Review B, 66, Article ID: 201403.
[2] Wu, J., Walukiewicz, W., Yu, K.M., Ager III, J.W., Haller, E.E., Lu, H., Schaff, W.J., Saito, Y. and Nanishi, Y. (2002) Unusual Properties of the Fundamental Band Gap of InN. Applied Physics Letters, 80, 3967-3969.
[3] Garcia, A., Grimalsky, V., Gutierrez, E. and Palankovski, V. (2009) Nonstationary Effects of the Space Charge in Semiconductor Structures. Journal of Applied Physics, 105, Article ID: 074501.
[4] Garcia-Barrientos, A. and Palankovski, V. (2011) Numerical Simulations of Space Charge Waves in InP Films and Microwave Frequency Conversion under Negative Differential Conductivity. Applied Physics Letters, 98, 072110-1- 072110-3.
[5] Koshevaya, S.V., Grimalsky, V.V., Garcia-B, A. and Diaz-A, F. (2012) Amplification and Nonlinear Interaction of Space Charge Waves of Microwave Band in Heterogeneous Gallium Nitride Films. Radioelectronics and Communications Systems, 55, 289-298.
[6] Schley, P., Goldhahn, R., Gobsch, G., Feneberg, M., Thonke, K., Wang, X. and Yoshikawa, A. (2009) Influence of Strain on the Band Gap Energy of Wurtzite InN. Physica Status Solidi (b), 246, 1177-1180.
[7] Beck, A.H.W. (1958) Space-Charge Waves and Slow Electromagnetic Waves. Pergamon, New York.
[8] Dean, R.H., Dreeben, A.B., Kaminski, J.F. and Triano, A. (1970) Travelling-Wave Amplifier Using Thin Epitaxial GaAs Layer. Electronics Letters, 6, 775-776.
[9] Scott, A. (1970) Active and Nonlinear Wave Propagation in Electronics. John Wiley & Sons, New York.
[10] Carnez, B., Cappy, A., Kaszynskii, A., Constant, E. and Salmer, G. (1980) Modeling of a Submicrometer Gate Field-Effect Transistor Including Effects of Nonstationary Electron Dynamics. Journal of Applied Physics, 51, 784-790.
[11] Mikhailov, A.I. (2000) Experimental Study of the Parametric Interaction between Space-Charge Waves in Thin-Film GaAs-Based Semiconductor Structures. Technical Physics Letters, 26, 217-219.
[12] Lu, H., Schaff, W.J., Eastman, L.F. and Stutz, C.E. (2003) Surface Charge Accumulation of InN Films Grown by Molecular-Beam Epitaxy. Applied Physics Letters, 82, 1736.
[13] Tansley, T. and Foley, C. (1984) Electron Mobility in Indium Nitride. Electronics Letters, 20, 1066-1068.
[14] Yamamoto, A., Shin-ya, T., Sugiura, T. and Hashimoto, A. (1998) Electron Mobility in Indium Nitride. Journal of Crystal Growth, 189/190, 461-465.
[15] Franssen, G., Suski, T., Perlin, P., Teisseyre, H., Khachapuridze, A., Dmowski, L.H., Plesiewicz, J.A., Kaminska, A., Kurouchi, M., Nanishi, Y., Lu, H. and Schaff, W. (2006) Band-to-Band Character of Photoluminescence from InN and In-Rich InGaN Revealed by Hydrostatic Pressure Studies. Applied Physics Letters, 89, Article ID: 121915.
[16] Polyakov, V. and Schwierz, F. (2006) Low-Field Electron Mobility in Wurtzite InN. Applied Physics Letters, 88, 032101-1-032101-3.
[17] Bougrov, V., Levinshtein, M.E., Rumyantsev, S.L. and Zubrilov, A. (2001) Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe. In: Levinshtein, M.E., Rumyantsev, S.L. and Shur M.S., Eds., John Wiley & Sons, Inc., New York, 1-30.

Copyright © 2021 by authors and Scientific Research Publishing Inc.

Creative Commons License

This work and the related PDF file are licensed under a Creative Commons Attribution 4.0 International License.