Microstructure and 355 nm Laser-Induced Damage Characteristics of Al₂O₃ Films Irradiated with Oxygen Plasma under Different Energy

Dongping Zhang, Yan Li, Jingting Luo, Zhuanghao Zheng, Guangxing Liang, Xingmin Cai, Fan Ye, Ping Fan, Jianjun Huang

Institute of Thin Film Physics and Applications, Shenzhen University, Shenzhen, China.

DOI: 10.4236/opj.2013.32025                

Abstract

Al₂O₃ films were prepared using electron beam evaporation at room temperature. The samples were irradiated with oxygen plasma under different energy. The variations in average surface defect density and root mean square (RMS) surface roughness were characterized using an optical microscope and an atomic force microscope. Surface average defect density increased after plasma treatment. The RMS surface roughness of the samples decreased from 1.92 nm to 1.26 nm because of surface atom restructuring after oxygen plasma conditioning. A 355 nm laser-induced damage experiment indicated that the as-grown sample with the lowest defect density exhibited a higher laser-induced damage threshold (1.12 J/cm²) than the other treated samples. Laser-induced damage images revealed that defect is one of the key factors that affect laser-induced damage on Al₂O₃ films.

Keywords

Thin Film; Laser-Induced Damage; Electron Beam Evaporation; Plasma Irradiation

Conflicts of Interest

The authors declare no conflicts of interest.

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