Spin Transfer in EuO:Fe/GaAs Contact

Arnold S. Borukhovich

Russian State Vocational Pedagogic University, Ekaterinburg, Russia.

DOI: 10.4236/jmp.2013.43041                

Abstract

Spin-wave structures whose current-voltage characteristics are controlled at room temperatures by magnetic field were produced with industrial technological methods using a spintronic europium-monoxide-based thin-film composite as an emitter and monocrystalline semiconductor n-GaAs as a collector. This shows that spin current transport actually exists and that a high-temperature spin transistor was produced with the use of the magnetic semiconductor/nonmagnetic semiconductor contact.

Keywords

Spintronics; Magnetic Semi-Conduction; Spin Transfer

Conflicts of Interest

The authors declare no conflicts of interest.

References

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