Modelling of Thermal Behavior N-Doped Silicon Resistor

DOI: 10.4236/jst.2012.23019   PDF   HTML   XML   4,624 Downloads   7,557 Views   Citations

Abstract

From the analysis of the frequently models of mobility used in the literature, we determine by an identification method the temperature coefficients α and β of a silicon resistance doped with donor atoms. Their variations show a non linear dependence according to the doping and the existence of a minimal value at particular concentration. Moreover, the comparison between the obtained results and those of a P-type resistance shows that there is a strong similarity in their thermal behaviours, except for a particular couple of α and β.

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F. Kerrour, A. Boukabache and P. Pons, "Modelling of Thermal Behavior N-Doped Silicon Resistor," Journal of Sensor Technology, Vol. 2 No. 3, 2012, pp. 132-137. doi: 10.4236/jst.2012.23019.

Conflicts of Interest

The authors declare no conflicts of interest.

References

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