Optical Constants for MBE n-Type GaAs Films Doped by Si or Te between 1.50-4.75 eV

Svetlana N. Svitasheva

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DOI: 10.4236/jemaa.2010.26046                

Abstract

The thickness and spectral dependence of the complex refractive index of upper layer in thin-film MBE-grown GaAs heterostructures were calculated basing on an classical oscillatory model of dielectric function from spectra measured by spectroscopic ellipsometry (nondestructive, contactless optical method) in the range of 1.5-4.75 eV.

Keywords

GaAs, Heterostructure, Optical Properties, Thin Films, Spectroscopic Ellipsometry

Conflicts of Interest

The authors declare no conflicts of interest.

References

[1]	A. K. Bakarov, K. S. Zhuravlev. A. I. Toropov, T. S. Shamirzaev, Y. B. Myakishev and Y. N. Rakov, “High- Power Microwave FETs on Epitaxial AlGaAs GaAs Structures,” Mikroelektronika, Vol. 31, No. 3, 2002, pp. 163-169.
[2]	J. V. D. Lorenzo and D. D. Khandelwal, “GaAs FET Principles and Technology,” Artech House, Dedham, 1982.
[3]	H. C. Jr. Casey, D. D. Sell and R. W. Wecht, “Concentration Dependence of the Absorption Coefficient for n- and p-Type GaAs between 1.3 and l.6 eV,” Journal of Applied Physics, Vol. 46, No. 1, 1975, pp. 250-257.
[4]	V. I. Gavrilenko, A. M. Grekhov, D. V. Korbutyak and V. G. Litovchenko, “Optical Properties of Semiconductors,” in Russian, Nauk. Dumka, Kiev, 1987, pp. 85-93.
[5]	M. Erman, J. B. Theeten, P. Chambon, S. M. Kelso, D. E. Aspnes, “Optical Properties and Analysis of GaAs Single Crystal Partly Amorphized by Ion Implantation,” Journal of Applied Physics, Vol. 56, No. 10, 1984, pp. 2664-2671.
[6]	N. Saxena, “Changes in Phase and Amplitude of Polarized Light Reflected from a Film-Covered Surface and Their Relations with Thickness,” Journal of the Optical Society of America, Vol. 55, No. 9, 1965, pp. 1061-1067.
[7]	Y. G. Galitsyn, Y. P. Petrenko and S. N. Svitasheva, “Investigation of Kinetics of Formation and Oxide Composition on a Cleaved Surface of GaAs(l10),” Ser Fizika Khimiya Mekhanika, Poverkhnost, No. 11, 1987, pp. 51-58.
[8]	R. M. A. Azzam and N. M. Bashara, “Ellipsometiy and Polarized Light,” North-Holland, Amsterdam, 1977.
[9]	S. N. Svitasheva, “Exact Solution to the Inverse Eliipsometric Problem for Absorbing Films,” DAN SSSR, Vol. 318, No. 5, 1991, p. 1154.
[10]	Y. E. Voskoboinikov, E. V. Petukhova and S. N. Svitasheva, “An Efficient Algorithm for Solving the Inverse Eliipsometric Problem for Stronglv Absorbing Films,” Avtometriva, No. 4, 1996, p. 110; Optoelectronics Instrumentation Data Process, No. 4, 1996, p. 99.
[11]	S. N. Svitasheva, “Some Aspects of Solving the Inverse Eliipsometric Problem for Strongly Absorbing Films,” Avtometriva, No. 4, 1996, p. 119; Optoelectronics Instrumentation Data Process, No. 4, 1996, p. 108.
[12]	V. G. Polovinkin and S. N. Svitasheva, “Determination of the Number of Inverse Eliipsometric Problem Solutions in the Given Domain of Parameters,” Avtometriva, No. 4, 1999, p. 94; Optoelectronics Instrumentation Data Process, No. 4, 1999, p. 79.