[1]
|
N. F. Mott, “Conduction in glasses containing transition metal ions,’’ J. Non-Cryst. Solids, vol.1, 1968, pp. 1-17.
|
[2]
|
N. F. Mott, “Metal-Insulator Transitions,” Taylor and Francis, London, 1974.
|
[3]
|
B. I. Shklovskii and A. L. Efros, “Electronic Properties of Doped Semiconductors,” Springer, Berlin, 1984, pp. 191-195.
|
[4]
|
L. Efros and B. I. Shklovskii, “Coulomb gap and low-temperature conductivity of disordered systems,’’ J. Phys. C, vol. 8, 1975, L49.
|
[5]
|
A. El kaaouachi, A. Nafidi and G. Biskupski, “Positive and negative magnetoresistance on both sides of the metal-insulator transition in metallic n-type InP,’’ Semiconductors Sciences and Technology, vol. 18, 2003, pp. 69-74.
|
[6]
|
R. Abdia, A. El kaaouachi, A. Nafidi and J. Himine, “Positive magnetoresistance behaviour in the insulating side of the metal–insulator transition in CdSe,” Physica B Condensed Matter, vol. 373, 2006, pp. 96-99.
|
[7]
|
A. El kaaouachi, R. Abdia and A. Nafidi, “Positive magnetoresistance in the variable range hopping regime in CdSe, Physica E: Low-dimensional Systems and Nanostructures,’’ Physica E, vol. 32, 2006, pp. 419-421.
|
[8]
|
R. Abdia, A. El kaaouachi, A. Nafidi, G. Biskupski and J. Hemine, “Variable range hopping conductivity and negative magnetoresistance in n-type InP semiconductor,” Journal of Solid State Electronics, vol. 53, 2009, pp. 469–472.
|
[9]
|
A.G. Zabrodskii and K.N. Zinoveva, “Low-temperature conductivity and metal insulator transition in compensate n-Ge,’’ Sov. Phys. JETP 59, 1984, p. 425.
|
[10]
|
R. Rosenbaum, “Crossover from Mott to Efros-Shklovskii variable-range hopping conductivity in InxOy,” Phys.Rev.B 44, 1991, pp. 3599-3603.
|
[11]
|
M. Iqbal, J. Galibert, J. Léotin, S. Askenazy, S. Waffenschmidt and J. Wosnitza, “Coulomb gap shrinkage in compensated Si:(P, B) in high magnetic fields,” Physica B 246-247, 1998, pp. 282-285.
|
[12]
|
A. El kaaouachi, R.Abdia, A. Nafidi and G. Biskupski, “Crossover phenomenon for variable range hopping conduction and positive magnetoresistance in insulating N-Type InP,’’ Journal of Annales de Chimie Sciences des Matériaux France, Vol 33/4, 2008, pp. 357-364.
|