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Characterization of ZnO Thin Films Grown by SILAR Method

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DOI: 10.4236/oalib.1100588    1,161 Downloads   2,141 Views   Citations

ABSTRACT

Zinc oxide (ZnO) thin films have been deposited using a SILAR (Successive Ionic Layer Adsorption and Reaction) technique, which is based on the alternate dipping of substrate in the solution and distilled water. The thin films were grown on copper, silicon and glass substrates. The precursors for ZnO films were diluted aqueous solution ZnSO4 complexed with NH3. The films were investigated by X-ray diffraction, scanning electron microscopy, XPS spectroscopy and spectrophotometer. XRD measurement showed that the films were crystallized in the wurtzite phase type with preferred orientation (002). X-ray photoelectron spectroscopy (XPS) was used to monitor changes in oxidation state of ZnO thin films. The XPS peaks of the O1s, Zn2p3/2 and Zn2p1/2 were used for studding the ZnO film. The results of influence of different parameters of SILAR method on phase structure, surface morphology, and optical properties are studied and discussed.

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

Raidou, A. , Benmalek, F. , Sall, T. , Aggour, M. , Qachaou, A. , Laanab, L. and Fahoume, M. (2014) Characterization of ZnO Thin Films Grown by SILAR Method. Open Access Library Journal, 1, 1-9. doi: 10.4236/oalib.1100588.

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