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The Effect of Light on the CVC of Strained p-n-Junction in a Strong Microwave Field

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DOI: 10.4236/jmp.2015.615231    1,778 Downloads   1,960 Views  


For the first time the effect of light on the CVC of strained p-n-junction in a strong microwave field is examined. It is shown that the deformation and the microwave field increase the current through p-n-junction, and the light decreases it. The mechanism of this phenomenon is explained by the fact that under heating of the charge carriers by microwave field the recombination current arises, and under the action of light the generation current arises which are directed oppositely. And under the influence of the deformation the band gap of the semiconductor will be changed.

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The authors declare no conflicts of interest.

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Dadamirzaev, M. (2015) The Effect of Light on the CVC of Strained p-n-Junction in a Strong Microwave Field. Journal of Modern Physics, 6, 2275-2279. doi: 10.4236/jmp.2015.615231.


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