On the Conduction Mechanism of Silicate Glass Doped by Oxide Compounds of Ruthenium (Thick Film Resistors)
Gulmurza Abdurakhmanov
DOI: 10.4236/wjcmp.2011.12004   PDF   HTML     3,501 Downloads   8,471 Views   Citations


The results of the investigation of conduction mechanism of silicate glass doped by oxide compounds of ruthenium (thick film resistor) are reported. The formation of diffusion zones in the softened glass during firing process of the mixture of the glass and the dopant powders is considered. As the result the doping glass becomes conductive. These diffusion zones have higher conductivity and act as percolation levels for the free charge carriers. The effect of tem-perature and duration of firing process on the conductivity of doped glass is considered. Experimental results are in a good agreement with the model.

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G. Abdurakhmanov, "On the Conduction Mechanism of Silicate Glass Doped by Oxide Compounds of Ruthenium (Thick Film Resistors)," World Journal of Condensed Matter Physics, Vol. 1 No. 2, 2011, pp. 19-23. doi: 10.4236/wjcmp.2011.12004.

Conflicts of Interest

The authors declare no conflicts of interest.


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