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Schottky Barrier Parameters of Pd/Ti Contacts on N-Type InP Revealed from I-V-T And C-V-T Measurements

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DOI: 10.4236/jmp.2011.23018    8,693 Downloads   17,453 Views   Citations

ABSTRACT

We report on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Pd/Ti/n-InP Schottky barrier diodes (SBDs) in the temperature range 160-400 K in steps of 40 K. The barrier heights and ideality factors of Schottky contact are found in the range 0.35 eV (I-V), 0.73 eV (C-V) at 160 K and 0.63 eV (I-V), 0.61 eV (C-V) at 400 K, respectively. It is observed that the zero-bias barrier height decreases and ideality factor n increase with a decrease in temperature, this behaviour is attributed to barrier inhomogeneities by assuming Gaussian distribution at the interface. The calculated value of series resistance (Rs) from the forward I-V characteristics is decreased with an increase in temperature. The homogeneous barrier height value of approximately 0.71 eV for the Pd/Ti Schottky diode has been obtained from the linear relationship between the temperature-dependent experimentally effective barrier heights and ideality factors. The zero-bias barrier height ( ) versus 1/2kT plot has been drawn to obtain evidence of a Gaussian distribution of the barrier heights and values of = 0.80 eV and = 114 mV for the mean barrier height and standard deviation have been obtained from the plot, respectively. The modified Richardson ln(I0/T2)- ( ) versus 1000/T plot has a good linearity over the investigated temperature range and gives the mean barrier height ( ) and Richardson constant (A*) values as 0.796 eV and 6.16 Acm-2K-2 respectively. The discrepancy between Schottky barrier heights obtained from I-V and C-V measurements is also interpreted.

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

D. Reddy, M. Reddy, N. Reddy and V. Reddy, "Schottky Barrier Parameters of Pd/Ti Contacts on N-Type InP Revealed from I-V-T And C-V-T Measurements," Journal of Modern Physics, Vol. 2 No. 3, 2011, pp. 113-123. doi: 10.4236/jmp.2011.23018.

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