New Model for Drain and Gate Current of Single-Electron Transistor at High Temperature

Amine Touati, Samir Chatbouri, Nabil Sghaier, Adel Kalboussi

Laboratory of Microelectronics and Instrumentation, Faculty of Sciences of Monastir, University of Monastir, Monastir, Tunisia.

DOI: 10.4236/wjnse.2012.24022                

Abstract

We propose a novel analytical model to describe the drain-source current as well as gate-source of single-electron transistors (SETs) at high temperature. Our model consists on summing the tunnel current and thermionic contribution. This model will be compared with another model.

Keywords

Single-Electron Transistor (SET); Master Equation; Orthodox Theory; Tunnel Current; Thermionic Current; SIMON

Conflicts of Interest

The authors declare no conflicts of interest.

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