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Positive Magnetoresistance in Hydrogenated Amorphous Alloys Silicon Nickel a-Si1-yNiy:H at Very Low Temperature with Magnetic Field

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DOI: 10.4236/jmp.2012.36061    3,238 Downloads   5,358 Views   Citations

ABSTRACT

We present results of an experimental study of magnetoresistance phenomenon in an amorphous silicon-nickel alloys a-Si1-yNiy:H:H (where y = 0.23) on the insulating side of the metal-insulator transition (MIT) in presence of magnetic field up to 4.5 T and at very low temperature. The electrical resistivity is found to follow the Efros-Shklovskii Variable Range Hopping regime (ES VRH) with T -1/2. This behaviour indicates the existence of the Coulomb gap (CG) near the Fermi level.

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

A. Narjis, A. kaaouachi, J. Hemine, A. Sybous, L. Limouny, S. Dlimi, R. Abdia and G. Buskipski, "Positive Magnetoresistance in Hydrogenated Amorphous Alloys Silicon Nickel a-Si1-yNiy:H at Very Low Temperature with Magnetic Field," Journal of Modern Physics, Vol. 3 No. 6, 2012, pp. 447-450. doi: 10.4236/jmp.2012.36061.

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