Detecting Ultra-Violet Radiation by Using Titanium Dioxide Nanoparticles

Naser Hatefi Kargan, Mousa Aliahmad, Samereh Azizi

Department of Physics, Faculty of Sciences, University of Sistan and Baluchestan, Zahedan, Iran.

DOI: 10.4236/snl.2012.23006                

Abstract

In this paper sensitivity of chemically synthesized titanium dioxide (TiO₂) nanoparticles to ultra-violet (UV) radiation is investigated. For this purpose three types of ultra-violet photodetectors were fabricated, one with as-synthesized TiO₂ nanoparticles, another one with TiO₂ nanoparticles annealed at 600℃, and the third one with TiO₂ nanoparticles annealed at 800℃. In each case the annealing time duration was one hour. The photodetectors were fabricated on glass slides where on them a thin layer of fluorine doped tin oxide (FTO) was deposited by spray pyrolysis. The results show that all photodetectors are sensitive to UV radiation where the photodetectors fabricated from annealed TiO₂ nanoparticles are more sensitive than the photodetectors fabricated from as-synthesized TiO₂ nanoparticles.

Keywords

Ultra-Violet Photodetector; Titanium Dioxide; Nanocrystals; Nanoparticles

Conflicts of Interest

The authors declare no conflicts of interest.

References

[1]	E. Monroy, F. Omnes and F. Calle, “Wide-Bandgap Semiconductor Ultraviolet Photodetectors,” Semiconductor Science and Technology, Vol. 18, No. 4, 2003, pp. R33- R51. doi:10.1088/0268-1242/18/4/201
[2]	S. V. Averine, P. I. Kuznetzov, V. A. Zhitov and N. V. Alkeev, “Solar-Blind MSM-Photodetectors Based on AlxGa1–xN/GaN Heterostructures Grown by MOCVD,” Solid-State Electronics, Vol. 52, No. 5, 2008, pp. 618- 624. doi:10.1016/j.sse.2007.10.037
[3]	S. K. Zhang, W. B. Wang, I. Shtau, F. Yun, L. He, H. Morkoc, X. Zhou, M. Tamargo and R. R. Alfano, “Backilluminated GaN/AlGaN Heterojunction Ultraviolet Photo-detector with High Internal Gain,” Applied Physics Let- ters, Vol. 81, No. 25, 2002, pp. 4862-4864. doi:10.1063/1.1526166
[4]	I.-S. Seo, I.-H. Lee, Y.-J. Park and C.-R. Lee, “Characteristics of UV Photodetector Fabricated by Al0.3Ga0.7N/GaN Heterostructure,” Journal of Crystal Growth, Vol. 252, No. 1-3, 2003, pp. 51-57. http://dx.doi.org/10.1016/S0022-0248(02)02523-X
[5]	M. S. Shur, S. Rumyantsev, R. Gaska, B. Q. Wei, R. Va jtai, P. M. Ajayan and J. Sinius, “Structural and Transport Properties of CdS Films Deposited on Flexible Substrates,” Solid-State Electronics, Vol. 46, No. 9, 2002, pp. 1417-1420. doi:10.1016/S0038-1101(02)00073-4
[6]	S. Salvatori, G. Mazzeo, G. Conte, M. C. Rossi and V. Ralchenko, “Polycrystalline Diamond Position Sensitive Detector for Excimer Laser UV Radiation,” Diamond and Related Materials, Vol. 13, No. 4-8, 2004, pp. 948-953.
[7]	R. F. Wolffenbuttel, “Silicon Photodetectors with a Selective Spectral Response,” Sensors Update, Vol. 9, No. 1, 2001, pp. 69-101. doi:10.1002/1616-8984(200105)9:1<69::AID-SEUP69>3.0.CO;2-Q
[8]	D. Caputo, G. de Cesare, A. Nascetti and M. Tucci, “On the Fabrication and Characterization of Amorphous Silicon Ultra-Violet Sensor Array,” Thin Solid Films, Vol. 517, No. 23, 2009, pp. 6422-6425. doi:10.1016/j.tsf.2009.02.064
[9]	X. Kong, C. Liu, W. Dong, X. Zhang, C. Tao, L. Shen, J. Zhou, Y. Fei and S. Ruan, “Metal-Semiconductor-Metal TiO2 Ultraviolet Detectors with Ni Electrodes,” Applied Physics Letters, Vol. 94, No. 12, 2009, Article ID 123502. doi:10.1063/1.3103288
[10]	X. Chen and S. S. Mao, “Titanium Dioxide NanoMaterials: Synthesis, Properties, Modifications, and Applications,” Chemical Reviews, Vol. 107, No. 7, 2007, pp. 2891-2959. doi:10.1021/cr0500535