Journal of Crystallization Process and Technology

Volume 5, Issue 1 (January 2015)

ISSN Print: 2161-7678   ISSN Online: 2161-7686

Google-based Impact Factor: 1  Citations  

Low Resistive TiO2 Deposition by LPCVD Using TTIP and NbF5 in Hydrogen-Ambient

HTML  XML Download Download as PDF (Size: 3637KB)  PP. 15-23  
DOI: 10.4236/jcpt.2015.51003    4,523 Downloads   5,230 Views  Citations

ABSTRACT

Low resistive TiO2 layer was deposited by low pressure chemical vapor deposition (LPCVD) at pressure around 0.25 Pa using titanium-tetra-iso-propoxide (TTIP) and NbF5 in H2-ambient. Acti-vation energy for the deposition rate on the temperature was significantly decreased to 120 kJ/mol as compared with 228 kJ/mol for the deposition in H2 without NbF5. The deposition rate linearly increased with NbF5 supply rate but gradually decreased with H2 supply rate indicated that F on the deposition surface acts as catalyst for TTIP-dissociation but is non-activated by hydrogen. Resistivity of the layer was decreased by NbF5 supply depending on the deposition temperature with the activation energy of 319 kJ/mol, whereas the energy was 244 kJ/mol for the layer deposited in H2 without NbF5. The dependence of resistivity on NbF5. and H2 supply rates suggested that the doping should be performed by sufficient NbF5 and H2 supply rate to improve the crystallinity. As a result of the optimization, the resistivity was successfully reduced to 5 × 10-2 Ω·cm. Optical transmission spectra in UV-Vis region indicated that significant absorption observed for the layer deposited in H2 was notably decreased by using NbF5. The improved optical property was better than that for the layer deposited in O2-ambient.

Share and Cite:

Yamauchi, S. , Ishibashi, K. and Hatakeyama, S. (2015) Low Resistive TiO2 Deposition by LPCVD Using TTIP and NbF5 in Hydrogen-Ambient. Journal of Crystallization Process and Technology, 5, 15-23. doi: 10.4236/jcpt.2015.51003.

Cited by

[1] Drastic Resistivity Reduction of CVD-TiO2 Layers by Post-Wet-Treatment in HCl Solution
Journal of Crystallization Process and Technology, 2015

Copyright © 2024 by authors and Scientific Research Publishing Inc.

Creative Commons License

This work and the related PDF file are licensed under a Creative Commons Attribution 4.0 International License.