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[1]
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Modeling of access resistances and channel temperature estimation for GaN HEMT
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Journal of Thermal …,
2022 |
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[2]
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An analytical model to calculate the current–voltage characteristics of AlGaN/GaN HEMTs
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Journal of …,
2022 |
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[3]
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Quasi-2-D Physical Modeling of GaN Microwave HEMTs for RF Applications
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IEEE Transactions on …,
2022 |
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[4]
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Performance Projection of GaN HEMT: Experimental Verification Using Angelov Model
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2022 International Conference on …,
2022 |
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[5]
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A Simple Analytical Model of a GaN MODFET to Study its DC and RF Performance
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2022 - CSIR-NIScPR,
2022 |
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[6]
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Design, Simulation and Characterization of Reconfigurable Mixer Using Gan Hemt Technology
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2022 |
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[7]
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Performance Prediction of GaN HEMTs Using Angelov and Curtice Models
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2022 Second International …,
2022 |
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[8]
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A Dielectrically Modulated AlGaN/InN/GaN Nanoelectronic High Electron Mobility Transistor based Biosensor for Protein Detection
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2022 - NIScPR-CSIR,
2022 |
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[9]
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Performance Projection of GaN HEMT: Experimental Verification Using Curtice Model
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2021 International …,
2021 |
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[10]
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Prevalence and concentration of mycotoxins (Aflatoxin B1, Ochratoxin A, Deoxynivalenol and Zearalenone) in the boiled poultry eggs and probabilistic health risk …
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International Journal of …,
2021 |
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[11]
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Modeling and Simulation of Non-Linear Microwave Power Amplifier Using Gan Hemt for S-Band Applications
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2021 |
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[12]
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Simulationsmodell für einen GaN-HEMT mit Schottky p-GaN-Gate
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2021 |
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[13]
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Investigation to Enhance the DC and RF Performances of Nitride-Based Nanoelectronic HEMTs
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Indian Journal of Pure & Applied Physics …,
2021 |
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[14]
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Numerical Study of Two HEMTs, AlGaN and InGaN, by Sharing the Drain Area for Power Application
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2021 |
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[15]
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Compact Modeling of High-Voltage Gallium Nitride Power Semiconductor Devices for Advanced Power Electronics Design
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2021 |
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[16]
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Comparative studies on the DC and RF performances of conventional HEMT and double quantum well heterostructure
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2021 |
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[17]
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Studies on the Electrical Characteristics of GaN based HEMTs at the AlGaN Nano-Layer Thickness of 9 nm
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2020 |
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[18]
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Study and Analysis of AlInN/GaN Based High Electron Mobility Transistor
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2020 |
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[19]
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Semi-classical and Quantum Transport for High Speed and High Power Electronic and Opto-electronic Devices
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2020 |
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[20]
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Correlation between Kink effect and trapping mechanism through H1 hole trap in Al 0.22 Ga 0.78 N/GaN/SiC HEMTs by current DLTS: field effect enhancement
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2020 |
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[21]
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Effects of Drain Voltage, Gate Voltage and Aluminium Mole Fraction on Drain Current in GaN based Single-Heterojunction HEMTs designed with AlGaN Nano-Layers
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2020 |
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[22]
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Self-Heating in the HEMT AlGaN/GaN transistor
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2020 |
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[23]
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Gallium Nitride—Emerging Future Technology for Low-Power Nanoscale IC Design
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2020 |
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[24]
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Etude et contribution à l'optimisation de la commande des HEMTs GaN
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2020 |
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[25]
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Electrical Characteristics of Nanoelectronic Double-Heterojunction High Electron Mobility Transistors
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2020 |
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[26]
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Drain Characteristics of GaN based Single-Heterojunction HEMTs with Variations in Gate Length and in Thickness of AlGaN Nano-Layer
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2020 |
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[27]
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Studies on the Effects of Aluminium Mole Fraction, Doping Concentration and Gate Length to Control the Drain Current in GaN based High Electron Mobility …
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National Conference on …,
2020 |
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[28]
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Studies on the Electrical Characteristics of Single-Heterojunction GaN based HEMTs with AlGaN Nano-Layer of 21 nm
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2019 |
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[29]
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Gallium Nitride based HEMTs in Nano-Scale Regime
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2019 |
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[30]
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Sensitive and Selective Detection of Pb2+ Ions Using 2,5-Dimercapto-1,3,4-Thiadiazole Functionalized AlGaN/GaN High Electron Mobility Transistor
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2019 |
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[31]
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YÜKSEK VOLTAJ VE DÜŞÜK KAÇAK AKIM İÇİN ALD İLE PASİVE EDİLMİŞ MIS HEMT ÜRETİMİ
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2019 |
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[32]
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Effect of mole fraction, doping concentration and gate length on the electrical characteristics of nanoelectronic High Electron Mobility Transistor
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2019 |
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[33]
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Reproducing GaN HEMT Kink Effect by Simulating Field-Enhanced Barrier Defect Ionization
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2019 |
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[34]
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Review on the Designs and Characteristics of High-Electron Mobility Transistors
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2018 |
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[35]
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AN X-BAND ELECTRICAL BALANCE DUPLEXER FOR IN BAND FULL DUPLEX COMMUNICATIONS
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2018 |
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[36]
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SiC and GaN Power Semiconductor Devices
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Power Electronics Handbook (Fourth Edition),
2018 |
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[37]
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Analytic Estimation of Two-Dimensional Electron Gas Density and Current-Voltage Characteristic in AlGaN/GaN HEMT's
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2018 |
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[38]
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Electrical Characteristics of Microelectronic GaN based HEMTs at the AlGaN Thickness of 10 nm
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2018 |
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[39]
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Studies on the DC Characteristics of Microelectronic AlGaN/GaN HEMTs
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2018 |
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[40]
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Effect of Gate Length on the Electrical Characteristics of Nanoelectronic AlGaN/GaN High Electron Mobility Transistors to Fabricate the Biomedical Sensors in …
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Journal of Nanoelectronics and Optoelectronics,
2018 |
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[41]
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Analytical Modeling and Simulation Based Investigation of AlGaN/AlN/GaN Bio-HEMT Sensor for C-erbB-2 Detection
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2018 |
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[42]
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Adaptation of Spectral Clustering in Telecommunication Industry for Customer Relationship Management
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2018 |
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[43]
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Analytic Estimation of Two-Dimensional Electron Gas Density and Current-Voltage Characteristic in AlGaN/GaN HEMT's.
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2018 |
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[44]
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Design of a multi-MHz resonant driver chip for high-voltage
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2018 |
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[45]
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Threshold Voltage Improvement of Enhancement-Mode Al2O3/ AIGaN/GaN MIS-HEMT with High Drain Current Density
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2018 |
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[46]
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Comparative Study Between AlGaN/GaN and AlInN/GaN High Electron Mobility Transistors
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2018 |
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[47]
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Calculating Transconductance of Nano-HEMT for Different Parasitic Resistances and External Biasing Conditions
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2018 |
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[48]
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Studies on the Variations of Drain Current in Gallium Nitride Based High Electron Mobility Transistors
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2018 |
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[49]
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Studies on the DC Characteristics of Nanoelectronic Single-Heterojunction GaN based HEMTs with AlGaN Layer of 22 nm
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2018 |
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[50]
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Electrical Characteristics of AlGaN/GaN/AlGaN HEMTs
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2018 |
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[51]
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Studies on the Electrical Characteristics of AlGaAs/GaAs High Electron Mobility Transistors
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2018 |
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[52]
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An accurate compact model for gallium nitride gate injection transistor for next generation of power electronics design
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2017 |
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[53]
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Novel Effect of Gate Length on the Electrical Characteristics of Nanoelectronic Double-Heterojunction HEMTs with the Circuit Symbols and Load Line to …
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2017 |
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[54]
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Simulation Studies on the Drain Characteristics of Microelectronic AlGaN/GaN HEMTs Corresponding to the 30 nm of AlGaN Nano-Layer
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2017 |
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[55]
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Novel Characteristics of GaN based Nanoelectronic Double-Heterojunction HEMTs to Establish a Solid-State-Electronics Laboratory
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2017 |
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[56]
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Effect of Aluminium Nitride Nucleation-Layer on the Drain Characteristics of Nanoelectronic AlGaN/GaN Single-Heterojunction HEMTs
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2017 |
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[57]
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Effect of Aluminium Nitride Layer on the Electrical Performance of Microelectronic HEMTs
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2017 |
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[58]
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Report on the effects of mole fraction, doping concentration, gate length and nano-layer thickness to control the device engineering in the Nanoelectronic …
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2017 |
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[59]
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Report on the Novel Electrical Characteristics of Microelectronic High Electron Mobility Transistors to Establish a Low-Cost Microelectronics Laboratory in …
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2017 |
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[60]
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Report on the novel electrical characteristics of microelectronic high electron mobility transistors to establish a low-cost microelectronics laboratory in the …
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2017 |
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[61]
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Modelling and comparison of Si-MOSFET and eGaN-HEMT for power converter applications using TCAD
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2017 |
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[62]
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A physics-based compact gallium nitride power semiconductor device model for advanced power electronics design
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2017 |
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[63]
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Integrated circuit with matching threshold voltages and method for making same
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2017 |
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[64]
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Piezotronic Effect tuned AlGaN/GaN High Electron Mobility Transistor
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Nanotechnology,
2017 |
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[65]
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Estimation of polarization charge in nitride based MODFETs using differential threshold voltage technique
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2016 |
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[66]
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Fabrication of ALN/GAN MIS-Hemt with SIN as gate dielectric and performance enhancement with ALD deposited alumina
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2016 |
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[67]
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Analysis of Heat Dissipation in AlGaN/GaN HEMT with GaN Micropits at GaN-SiC Interface
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ProQuest Dissertations Publishing,
2016 |
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[68]
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Characteristics of AlGaN/GaN HEMTs for Detection of MIG
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2016 |
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[69]
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Dependence of threshold voltage on doped layer thickness in AlGaN/GaN HEMT: An improved split donor E-mode design
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2016 |
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[70]
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A physics-based compact device model for GaN HEMT power devices
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2016 |
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[71]
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Development of InAlN HEMTs for space application
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2016 |
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[72]
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Simulation Studies on the Electrical Characteristics of Novel Nanoelectronic AlGaN/GaN/AlGaN Double-Heterojunction HEMTs for Industrial Applications
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2016 |
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[73]
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Variations of Source Current in the Double-Heterojunction HEMTs
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2016 |
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[74]
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Effect of Aluminium Mole Fraction on the AlGaN/GaN HEMTs with 10 nm AlGaN Nano-Layer
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2016 |
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[75]
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Characterization of AlGaN and GaN Based HEMT with AlN Interfacial Spacer
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Communication Systems and Network Technologies (CSNT), 2015 Fifth International Conference on,
2015 |
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[76]
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Modelling of advanced submicron Gate InGaAs/InAlAs pHEMTS and RTD devices for very high frequency applications
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2015 |
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[77]
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GaN/SiC based High Electron Mobility Transistors for integrated microwave and power circuits
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2015 |
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[78]
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Modeling of sheet carrier density and microwave frequency characteristics in Spacer based AlGaN/AlN/GaN HEMT devices
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Solid-State Electronics,
2014 |
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[79]
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Performance analysis of 20 nm gate-length In0. 2Al0. 8N/GaN HEMT with Cu-gate having a remarkable high ION/IOFF ratio
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A Bhattacharjee TR Lenka - 半导体学报: 英文版,
2014 |
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[80]
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Characterization and comparison between Ig (Vgs) structures HEMT AlInN/GaN and AlGaN/GaN
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Optical and Quantum Electronics,
2014 |
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[81]
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Performance analysis of 20 nm gate-length In0: 2Al0: 8N/GaN HEMT with Cu-gate having a remarkable high ION/IOFF ratio
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A Bhattacharjee, TR Lenka - jos.ac.cn,
2014 |
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[82]
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Performance analysis of 20 nm gate-length In_ (0: 2) Al_ (0: 8) N/GaN HEMT with Cu-gate having a remarkable high I_ (ON)/I_ (OFF) ratio
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半导体学报 (英文版),
2014 |
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[83]
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Modeling of 2DEG sheet carrier density and DC characteristics in spacer based AlGaN/AlN/GaN HEMT devices
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Superlattices and Microstructures,
2013 |
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[84]
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Tunnel MOS Heterostructure Field Effect Transistor for RF Switching Applications
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2013 |
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