Dr. Chun-Hu Cheng

Deptartment of Mechatronic Technology

National Taiwan Normal University, Chinese Taipei

E-mail: chcheng@ntnu.edu.tw

Qualifications

Double Ph.D., Electronics and Mechanical Engineering

Ph.D.,  Electronics Engineering, National Tsing Hua University

Ph.D., Mechanical Engineering, National Chiao Tung University

Publications (Selected)

1. C. H. Cheng; Albert Chin; F. S. Yeh, Stacked GeO/SrTiO Resistive Memory with Ultra-Low Resistance Currents, Appl. Phy. Lett., 98, 052905, 2011.
2. C. H. Cheng; Albert Chin; F. S. Yeh, Ultra-low Switching Energy Ni/GeOx/HfON/TaN RRAM, IEEE Electron Device Lett., 32 (3), 366-368, 2011.
3. C. H. Cheng; Albert Chin; F. S. Yeh, Novel ultra-low power RRAM with good endurance and retention, IEEE Symp, VLSI Technology and Circuits (VLSI), 85-86, 2010.
4. C. H. Cheng; Albert Chin; F. S. Yeh, High Performance Ultra-Low Energy RRAM with Good Retention and Endurance, IEEE International Electron Devices Meeting (IEDM) Tech. Dig., 448-451, 2010.
5. C. Y. Tsai; T. H. Lee; Hong Wan; Albert Chin; C. H. Cheng; F. S. Yeh, Highly-scaled 3.6-nm ENT trapping layer MONOS device with good retention and endurance, IEEE International Electron Devices Meeting (IEDM) Tech. Dig., 110-113, 2010.
6. C. H. Cheng; Albert Chin; F. S. Yeh, Ultralow-Power Ni/GeO/STO/TaN Resistive Switching Memory, IEEE Electron Device Lett., 31 (9), 1020-1022 , 2010.
7. C. H. Cheng; H. H. Hsu; Albert Chin; F. S. Yeh, Characteristics of Cerium Oxide for Metal-Insulator-Metal Capacitors, Electrochemical and Solid-State Letters, 13 (1), 16-19, 2010.
8. C. Y. Tsai; T. H. Lee; C. H. Cheng; Hong Wang; Albert Chin, Highly-Scaled Charge-Trapping Layer of ZrON Non-Volatile Memory Device with Good Retention, Appl. Phy. Lett., 97, 213504, 2010.
9. C. H. Cheng; Albert Chin; F. S. Yeh, Very High Performance Non-Volatile Memory on Flexible Plastic Substrate IEEE International Electron Devices Meeting (IEDM) Tech. Dig., 512-515, 2010.
10. B. C. He; C. H. Cheng; H. C. Wen; Y. S. Lai; P. F. Yang; M. H. Lin; W. C. Chou; W. F. Wu; C. P.Chou, Evaluation of the Nanoindentation behaviors of SiGe epitaxial on Si substrate, Microelectronics Reliability, 50, 63-69, 2009.
11. S. H. Lin; C. H. Cheng; W. B. Chen; F. S. Yeh; C. P. Chou; S. P. McAlister; Albert Chin, Low Threshold Voltage TaN/LaTiO n-MOSFETs with Small EOT, IEEE Electron Device Lett., 30 (9), 999-1001, 2009.
12. H. H. Hsu; C. H. Cheng; B. Y. Tsui, High performance Metal/Insulator/Metal capacitors using HfTiO as dielectric, IEEE International Symposium on VLSI Technology, System and Applications (VLSI-TSA), 2009.
13. C. H. Cheng; S. H. Lin; K. Y. Jhou; W. J. Chen; C. P. Chou; F. S. Yeh; J. Hu; M. Huang; T. Arikado; S. P. McAlister; Albert Chin, High Density and Low Leakage Current in TiO2 Capacitors Processed at 300oC, IEEE Electron Device Lett., 29 (8), 845-847, 2008.
14. C. H. Cheng; H. C. Pan; C. C. Huang; C. P. Chou; C. N. Hsiao; J. Hu; M. Huang; T. Arikado; S. P. McAlister; Albert Chin, Improvement of the Performance of TiHfO MIM Capacitors by Using a Dual Plasma Treatment of the Lower Electrode, IEEE Electron Device Lett.,  29 (10), 1105-1107, 2008.
15. K. C. Chiang; C. H. Cheng; H. C. Pan; C. N. Hsiao; C. P. Chou; S. P. McAlister; Albert Chin; H. L. Hwang, High Temperature Leakage Improvement in Metal-Insulator-Metal Capacitors by Work-Function Tuning, IEEE Electron Device Lett., 28 (3), 235-237, 2007.
16. C. H. Cheng; H. C. Pan; H. J. Yang; C. N. Hsiao; C. P. Chou; S. P. McAlister; Albert Chin, Improved High-Temperature Leakage in High-Density MIM Capacitors by Using a TiLaO Dielectric and an Ir Electrode, IEEE Electron Device Lett., 28 (12), 1095-1097, 2007.
17. K. C. Chiang; C. C. Huang; H. C. Pan; C. N. Hsiao; J. W. Lin; I. J. Hsieh; C. H. Cheng; C. P. Chou; Albert Chin; H. L. Hwang; S. P. McAlister, Thermal Leakage Improvement by Using a High Work-Function Ni Electrode in High-k TiHfO MIM Capacitors, J. Electrochem. Soc., 154, 54, 2007.
18. K. C. Chiang; C. H. Cheng; H. C. Pan; C. N. Hsiao; C. P. Chou; S. P. McAlister; Albert Chin; H. L. Hwang, Use of a High Work-Function Ni Electrode to Improved the Stress Reliability of Analog SrTiO3 Metal-Insulator-Metal Capacitors, IEEE Electron Device Lett., 28 (8), 694-696, 2007.
19. C. H. Cheng; K. C. Chiang; H. C. Pan; C. N. Hsiao; C. P. Chou; S. P. McAlister; Albert Chin, Improved Stress Reliability of Analog TiHfO Metal-Insulator-Metal Capacitors by Using a High Work-Function Electrode, Jpn. J. Appl. Phys, 46 (11), 7300-7302, 2007.
20. C. C. Haung; C. H. Cheng; Albert Chin; C. P. Chou, Leakage Current Improvement of Ni/TiNiO/TaN Metal-Insulator-Metal Capacitors using Optimized N+ Plasma Treatment and Oxygen Annealing,” Electrochemical and Solid-State Letters, 10 (10), H287-H290, 2007.

Profile Details

http://goo.gl/GHgrR