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Biography

Prof. Laurie E. Calvet

Université de Paris-Sud, France

 

Email: laurie.calvet@u-psud.fr

 

Qualifications

2001 Ph.D., Yale University, USA, Applied Physics
1996 M.Sc., Yale University, USA, Applied Physics

1995 B.Sc., Columbia University, New York, USA, Applied Physics

 

Publications (Selected)

  1. L. E. Calvet, G.A. Meshkov, E. Strupiechonski, D. Toubestani, J.P. Snyder, F. Fortuna, W. Wernsdorfer,“Low temperature transport spectroscopy of defects using Schottky barrier MOSFETs”, Physica-B 404 5136(2009)
  2. F. Gaucher, A. Pautrat, S. Autier-Laurent, C. David, L.E. Calvet, PH. Lecoeur, A.-M. Haghiri-Gosnet,“Fabrication of metallic oxide nanowires”, Microelectronic Engineering 86 820 (2009).
  3. L.E. Calvet, J.P. Snyder, W. Wernsdorfer “Probing the Density of States in a Metal-Oxide-Semicondctuor Field-Effect Transistor” 78 193308 (2008).
  4. L.E. Calvet, J.P. Snyder, W. Wernsdorfer “Excited State Spectroscopy of single Pt atoms in Si” Phys Rev B78 195309 (2008) (6 citations)
  5. L.E. Calvet, W. Wernsdorfer, J.P. Snyder, M.A. Reed “Transport Spectroscopy of single Pt impurities Boron in silicon using a Schottky barrier MOSFET” J cond Mat Phys 20 374125 (2008). (2 citation)
  6. L.E. Calvet, R.G. Wheeler, M.A. Reed “Effect of Local Strain on Single Acceptors in Si” Physical Review B 76 035319 (2007) (6 citations)
  7. L.E. Calvet, R.G. Wheeler, M.A. Reed “Observation of the Stark Effect in a Single Acceptor in Si ”Physical Review Letters 98 096805 (2007). (23 citations)
  8. Dirk N. Weiss, Xavier Brokmann, Laurie E. Calvet, Marc A. Kastner, Moungi G. Bawendi “Multi-island single-electron devices from self-assembled colloidal nanocrystal chains" Appl Phys Lett 88, 143507 (April 2006) (12 citations)
  9. L.E. Calvet, R.G. Wheeler, M.A. Reed, “Electron Transport Measurements of Schottky Barrier Inhomogeneities”, Appl. Phys. Lett. 80, 1761-1764 (March 2002) (29 Citations)
  10. L.E. Calvet, H. Leubben, T.P. Ma, M.A. Reed, C. Wang, J.P. Snyder, J.R. Tucker, “Suppression of Leakage Current in Schottky Barrier Metal Oxide Semiconductor Field Effect Transistors,” J. of Appl Phys., 91, 757-759(Jan 2002) (31 Citations)
  11. J.G. Wen, Z.P. Huang, D.Z. Wang, J.H. Chen, S.X. Yang, Z.F. Ren, J.H. Wang, L.E. Calvet, J. Chen, J.F. Klemic, and M.A. Reed. “Growth and characterization of aligned carbon nanotubes from patterned nickel nanodots and uniform thin films.” J. Materials Research 16, 3246-3253 (Nov 2001) (44 Citations)
  12. L.E. Calvet, H. Leubben, M.A. Reed, C. Wang, J.P. Snyder, J.R. Tucker, “Subthreshold and Scaling in Schottky Barrier MOSFETs,” Superlat. and Microstruct. 28, 501-506 (2000) (16 Citations)
  13. A.A. Kozhevnikov, R.J. Schoelkopf, L.E. Calvet, M.J. Rooks, D.E. Prober, “Shot Noise Measurements in Diffusive Normal Metal-Superconductor (N-S) Junctions”, J. of Low Temp. Phys. 118, 671-678 (2000) (6 Citations)
  14. J. Chen, L. Calvet, M.A. Reed, D.W. Carr, D.S. Grubisha, D.W. Bennett, “Electronic Transport through metal-1,4-phenylene diisocynaide-metal junctions”, Chem Phys. Lett. 313, 741-748 (Nov 1999) (113 Citations)
  15. Z. F. Ren, Z. P. Huang, J. W. Xu, D. Z. Wang, J. G. Wen, J. H. Wang, L. Calvet, J. Chen, J. F. Klemic, M.A. Reed, "Growth of a Single Free-Standing Carbon Nanotube on Each Nano-Nickel Dot", Appl. Phys. Lett. 75,1086-1088 (Aug 1999) (252 Citations)