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Biography
Prof. Vitalyi Igorevich Talanin
Computer Science & Software Engineering Department
Zaporozhye Institute of Economics and Information Technologies, Ukraine

Full Professor, Vice-Chief


Email: V. I. Talanin@mail.ru


Qulifications

2012-present  Zaporozhye Institute of Economics and Information Technologies, Computer Science & Software Engineering Department, Ukraine
2006-2012  Classical Privat University, Programming and information technology Department, Ukraine
2003-2006  Classical Privat University, Programming and information technology Department, Ukraine
2002-2003  Zaporozhye State Engineerind Academy, Physical and Biomedical Electronics Department, Ukraine
2002-2002  Zaporozhye State Engineerind Academy, Physical and Biomedical Electronics Department, Ukraine
1997-2003  Zaporozhye State Engineerind Academy, Publishing, Ukraine

Publications (selected)
  1. V. I. Talanin, I. E. Talanin, D. I. Levinson. Physics of the formation of microdefects in dislocation-free monocrystals of float-zone silicon, Semicond. Sci. & Technol. Vol. 17 (2002). 104.
  2. V. I. Talanin, I. E. Talanin, D. I. Levinson. Physical model of paths of microdefects nucleation in dislocation-free single crystals float-zone silicon // Cryst. Res. & Technol. Vol. 37 (2002). 983.
  3. V. I. Talanin, I. E. Talanin. Physical nature of grown-in microdefects in Czochralski-grown silicon and their transformation during various technological effects // Phys. Stat. Sol. (a). Vol. 200 (2003). 297.
  4. V. I. Talanin, I. E. Talanin. Classification of microdefects in semiconducting silicon // Semicond. Phys., Quantum Electronics & Optoelecrtronics. Vol. 6 (2003). 431.
  5. V. I. Talanin, I. E. Talanin. Nucleation, growth and transformation of microdefects in FZ-Si // Semicond. Phys., Quantum Electronics & Optoelecrtronics. Vol. 7 (2004) 16.
  6. V. I. Talanin, I. E. Talanin, D. I. Levinson. Formation of microdefects in semiconductor silicon // Crystallography Reports. Vol. 49 (2004). 188.
  7. V. I. Talanin, I. E. Talanin. Mechanism of formation and physical classification of the grown-in microdefects in semiconductor silicon // Defect & Diffusion Forum. Vol. 230-232 (2004). 177.
  8. V. I. Talanin, I. E. Talanin, S. A. Koryagin, M. Yu. Semikina. Modeling vacancy microvoids formation in dislocation-free silicon single crystals // Semicond. Phys., Quantum Electronics & Optoelecrtronics. Vol. 9 (2006). 77.
  9. V. I. Talanin, I. E. Talanin. Formation of grown-in microdefects in dislocation-free silicon monocrystals // In: New Research on Semiconductors/ Ed. T.B.Elliot. (Nova Sci. Publ., 2006, New York). Р. 31-68.
  10. V. I. Talanin, I. E. Talanin. On the recombination of intrinsic point defects in dislocation-free silicon single crystals // Physics of the Solid State. Vol. 49 (2007). 467.
  11. V. I. Talanin, I. E. Talanin, A. A. Voronin. About the simulation of primary grown-in microdefects in dislocation-free silicon single crystals formation // Canadian Journal of Physics. Vol. 85 (2007). 1459.
  12. V. I. Talanin. The modeling and properties of dislocation-free silicon single crystals defect structure. (HU “ZISMG”, 2007, Zaporozhye) 275 p. (On Russian).
  13. V. I. Talanin, I. E. Talanin. Modelling of the defect structure in dislocation-free silicon single crystals //Crystallography Reports. Vol. 53 (2008). 1124.
  14. V. I. Talanin, I. E. Talanin, A. I. Mazurskii, M. L. Maximchuk. The development of software for the calculation of dislocation-free silicon monocrystals grown-in defect structure // In: Algorithms & Programs for the Research of Physical Processes in Solid State/ Ed. A.N.Gorban. (CPU, 2009, Zaporozhye). P. 67-114. (On Russian).
  15. V. I. Talanin, I. E. Talanin.Modelling of defect formation processes in dislocation-free silicon single crystals //Crystallography Reports. Vol. 55 (2010). 632.
  16. V. I. Talanin, I. E. Talanin. Kinetics of formation of vacancy microvoids and interstitial dislocation loops in dislocation-free silicon single crystals // Physics of the Solid State. Vol. 52 (2010). 1880.
  17. V. I. Talanin, I. E. Talanin. Kinetics of high-temperature precipitation in dislocation-free silicon single crystals // Physics of the Solid State. Vol. 52 (2010). 2063.
  18. V. I. Talanin, I. E. Talanin. Kinetic model of growth and coalescence of oxygen and carbon precipitates during cooling of as-grown silicon crystals // Physics of the Solid State. Vol. 53 (2011). 119.
  19. V.I.Talanin, I.E.Talanin. A kinetic model of the formation and growth of interstitial dislocation loops in dislocation-free silicon single crystals // J. Crystal Growth. Vol.346 (2012). 45.
  20. V.I.Talanin, I.E.Talanin. The diffusion model of grown-in microdefects formation during crystallization of dislocation-free silicon single crystals // In: Advances in Crystallization Processes / Ed. Y. Mastai. (INTECH Publ., 2012, Rijeka). P. 611-632.