MSA> Vol.2 No.8, August 2011

Department of Applied Physics, Indian School of Mines, Dhanbad, India

 

Copyright © 2011 Achamma John Mathai, Chalappally Kesav Sumesh, Bharat Purushotamds Modi et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

 

How to Cite this Article

---

Mathai, A. , Sumesh, C. and Modi, B. (2011) Schottky Barriers on Layered Anisotropic Semiconductor – WSe₂ – with 1000 Å Indium Metal Thickness. Materials Sciences and Applications, 2, 1000-1006. doi: 10.4236/msa.2011.28135.

 

Download citation as EndNote