Journal of Surface Engineered Materials and Advanced Technology
Vol.4 No.5(2014), Paper ID 48552, 8
pages
DOI:10.4236/jsemat.2014.45028
Dependence of Atomic-Scale Si(110) Surface Roughness on Hydrogen Introduction Temperature after High-Temperature Ar Annealing
Koji Araki, Ryuji Takeda, Haruo Sudo, Koji Izunome, Xinwei Zhao
Base Technology, Technology, Global Wafers Japan Co., Ltd., Niigata, Japan
Base Technology, Technology, Global Wafers Japan Co., Ltd., Niigata, Japan
Base Technology, Technology, Global Wafers Japan Co., Ltd., Niigata, Japan
Base Technology, Technology, Global Wafers Japan Co., Ltd., Niigata, Japan
Department of Physics, Tokyo University of Science, Tokyo, Japan
Copyright © 2014 Koji Araki, Ryuji Takeda, Haruo Sudo, Koji Izunome, Xinwei Zhao et al. This is
an open access article distributed under the Creative Commons Attribution
License, which permits unrestricted use, distribution, and reproduction in any
medium, provided the original work is properly cited.
How to Cite this Article
Araki, K. , Takeda, R. , Sudo, H. , Izunome, K. and Zhao, X. (2014) Dependence of Atomic-Scale Si(110) Surface Roughness on Hydrogen Introduction Temperature after High-Temperature Ar Annealing.
Journal of Surface Engineered Materials and Advanced Technology,
4, 249-256. doi:
10.4236/jsemat.2014.45028.